Substrate treating apparatus and substrate support unit

Patent metadata

Field	Value
Publication number	US-2022044917-A1
Application number	US-202117395860-A
Country	US
Kind code	A1
Filing date	Aug 6, 2021
Priority date	Aug 7, 2020
Publication date	Feb 10, 2022
Grant date	—

Abstract

The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

First claim

What is claimed is:

1 . A substrate support unit provided in an apparatus for treating a substrate using plasma, the substrate support unit comprising:
a dielectric plate on which the substrate is placed; a lower electrode disposed under the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, wherein the through-hole has a third diameter, wherein the lower electrode includes a deformation portion extending downward from a center of a lower surface of the lower electrode and having a decreasing diameter toward the bottom, and the power supply rod is coupled to an end portion of the deformation portion.

2 . The substrate support unit of claim 1 , wherein the ground member further includes a guide portion extending upward from an inner diameter of the through-hole by a predetermined length and spaced apart from the power supply rod by a second gap.

3 . The substrate support unit of claim 2 , wherein the guide portion includes an extension extending along the deformation portion and spaced apart from the deformation portion by a predetermined distance.

4 . The substrate support unit of claim 2 , wherein the guide portion is integrally formed with the ground member, or formed separately from the ground member, and is electrically connected with the ground member.

5 . The substrate support unit of claim 1 , wherein the deformation portion is formed in a tapered shape having a decreasing diameter toward the bottom.

6 . The substrate support unit of claim 1 , wherein the deformation portion is formed in a rounded shape, the vertical cross-section of which has a decreasing diameter toward the bottom.

7 . The substrate support unit of claim 1 , wherein the first diameter is five to eight times greater than the first gap.

8 . The substrate support unit of claim 1 , wherein the third diameter is greater than the first gap by 10 mm or more.

9 . The substrate support unit of claim 2 , wherein the second diameter is six to eight times greater than the second gap.

10 . A substrate support unit provided in an apparatus for treating a substrate using plasma, the substrate support unit comprising:
a dielectric plate on which the substrate is placed; a lower electrode disposed under the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, wherein the through-hole has a third diameter, wherein the ground member further includes a guide portion extending upward from an inner diameter of the through-hole by a predetermined length and spaced apart from the power supply rod by a second gap.

11 . The substrate support unit of claim 10 , wherein the guide portion is integrally formed with the ground member, or formed separately from the ground member, and is electrically connected with the ground member.

12 . The substrate support unit of claim 10 , wherein the first diameter is five to eight times greater than the first gap.

13 . The substrate support unit of claim 10 , wherein the third diameter is greater than the first gap by 10 mm or more.

14 . The substrate support unit of claim 10 , wherein the second diameter is six to eight times greater than the second gap.

15 . A substrate support unit provided in an apparatus for treating a substrate using plasma, the substrate support unit comprising:
a dielectric plate on which the substrate is placed; a lower electrode disposed under the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, wherein the through-hole has a third diameter, wherein the first gap is increased farther away from the power supply rod.

16 . The substrate support unit of claim 15 , wherein an upper surface of the plate portion of the ground member is formed such that an inner area and an outer area have different heights.

17 . The substrate support unit of claim 16 , wherein the upper surface of the plate portion has a decreasing height from the inner area toward the outer area.

18 . The substrate support unit of claim 15 , further comprising:
a guide portion extending upward from an inner diameter of the through-hole by a predetermined length and spaced apart from the power supply rod by a second gap.

19 . The substrate support unit of claim 15 , wherein the lower electrode includes a deformation portion extending downward from a center of a lower surface of the lower electrode and having a decreasing diameter toward the bottom, and the power supply rod is coupled to an end portion of the deformation portion.

20 . An apparatus for treating a substrate, the apparatus comprising:
a chamber having a process space inside; a support unit configured to support the substrate in the process space; a gas supply unit configured to supply a gas into the process space; and a plasma source configured to generate plasma from the gas, wherein the support unit includes: a dielectric plate on which the substrate is placed; a lower electrode disposed under the dielectric plate, the lower electrode having a first diameter; a power supply rod configured to apply RF power to the lower electrode, the power supply rod having a second diameter; and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, wherein the through-hole has a third diameter, wherein the lower electrode includes a deformation portion extending downward from a center of a lower surface of the lower electrode and having a decreasing diameter toward the bottom, and the power supply rod is coupled to an end portion of the deformation portion, wherein the ground member further includes a guide portion extending upward from an inner diameter of the through-hole by a predetermined length and spaced apart from the power supply rod by a second gap, wherein the guide portion is integrally formed with the ground member, or formed separately from the ground member, and is electrically connected with the ground member, and wherein the first gap is increased farther away from the power supply rod.

Assignees

• Semes Co Ltd

Inventors

• Son Hyoungkyu
• An Jong-Hwan
• Cho Jae Hyun
• Bae Min Keun
• Kim Dong Suk
• Kim Hyeon Gyu
• Galstyan Ogsen
• Lee Won Seok
• Kim Sung Je

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32577

  Electrical connecting means · CPC title

• H10P72/72

  using electrostatic chucks · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0432

  mainly by conduction · CPC title