Epitaxial structure having super-lattice laminates

Patent metadata

Field	Value
Publication number	US-2021336058-A1
Application number	US-202117238330-A
Country	US
Kind code	A1
Filing date	Apr 23, 2021
Priority date	Apr 24, 2020
Publication date	Oct 28, 2021
Grant date	—

Abstract

An epitaxial structure includes a substrate, a lower super-lattice laminate, a middle super-lattice laminate, an upper super-lattice laminate and a channel layer. The lower super-lattice laminate includes a plurality of first lower film layers and a plurality of second lower film layers stacked alternately. The first lower film layer includes aluminum nitride. The second lower film layer includes aluminum gallium nitride. The middle super-lattice laminate includes a plurality of first middle film layers and a plurality of second middle film layers stacked alternately. The first middle film layer includes aluminum nitride. The second middle film layer includes gallium nitride doped with a doping material. The upper super-lattice laminate includes a plurality of first upper film layers and a plurality of second upper film layers stacked alternately. The first upper film layer includes gallium nitride doped with the doping material. The second upper film layer includes gallium nitride.

First claim

What is claimed is:

1 . An epitaxial structure having super-lattice laminates, comprising:
a substrate; a lower super-lattice laminate disposed on the substrate; wherein the lower super-lattice laminate includes: a plurality of first lower film layers and a plurality of second lower film layers stacked alternately with each other, each of the first lower film layers includes aluminum nitride (AlN), and each of the second lower film layers includes aluminum gallium nitride (AlGaN); a middle super-lattice laminate disposed on the lower super-lattice laminate; wherein the middle super-lattice laminate includes: a plurality of first middle film layers and a plurality of second middle film layers stacked alternately with each other, each of the first middle film layers includes aluminum nitride (AlN), and each of the second middle film layers includes gallium nitride doped with a doping material (doped-GaN); an upper super-lattice laminate disposed on the middle super-lattice laminate; wherein the upper super-lattice laminate includes: a plurality of first upper film layers and a plurality of second upper film layers stacked alternately with each other, each of the first upper film layers includes gallium nitride doped with the doping material (doped-GaN), and each of the second upper film layers includes gallium nitride (GaN); and a channel layer disposed on the upper super-lattice laminate; wherein the channel layer includes gallium nitride (GaN).

2 . The epitaxial structure according to claim 1 , further comprising: an insertion layer disposed between the lower super-lattice laminate and the middle super-lattice laminate; wherein the insertion layer includes gallium nitride (GaN), and a surface roughness (RMS) of an interface between the insertion layer and the middle super-lattice laminate is not less than 0.5 nanometers.

3 . The epitaxial structure according to claim 1 , wherein aluminum (Al) contents in the plurality of second lower film layers decrease along a thickness growth direction, and gallium (Ga) contents in the plurality of second lower film layers increase along the thickness growth direction; wherein, based on a sum of the aluminum (Al) contents and the gallium (Ga) contents being 100%, an initial content of the aluminum (Al) contents along the thickness growth direction is between 70% and 90%, and a final content of the aluminum (Al) contents along the thickness growth direction is between 10% and 30%.

4 . The epitaxial structure according to claim 1 , wherein the middle super-lattice laminate further includes a plurality of third middle film layers, and the plurality of third middle film layers are respectively disposed between the plurality of first middle film layers and the plurality of second middle film layers; wherein each of the third middle film layers includes gallium nitride (GaN).

5 . The epitaxial structure according to claim 1 , wherein, in the middle super-lattice laminate, a maximum doping concentration of doping concentrations in the plurality of second middle film layers including the doped-GaN is not less than 1E18/cm 3 ; wherein the doping concentrations in the plurality of second middle film layers including the doped-GaN are maintained at the maximum doping concentration.

6 . The epitaxial structure according to claim 1 , wherein, in the middle super-lattice laminate, a maximum doping concentration of doping concentrations in the plurality of second middle film layers including the doped-GaN is not less than 1E18/cm 3 ; wherein an initial doping concentration of the doping concentrations in the plurality of second middle film layers including the doped-GaN along a thickness growth direction is the maximum doping concentration, and the doping concentrations in the plurality of second middle film layers including the doped-GaN decrease from the maximum doping concentration along the thickness growth direction.

7 . The epitaxial structure according to claim 1 , wherein the doping material of the gallium nitride (doped-GaN) is at least one material selected from a group consisting of carbon (C), iron (Fe), manganese (Mn), magnesium (Mg), vanadium (V), chromium (Cr), beryllium (Be), and boron (B).

8 . The epitaxial structure according to claim 1 , wherein material compositions of two film layers connected to each other respectively in the upper super-lattice laminate and the middle super-lattice laminate are both the gallium nitride doped with the doping material (doped-GaN).

9 . The epitaxial structure according to claim 1 , wherein, in the upper super-lattice laminate, a maximum doping concentration of doping concentrations in the plurality of first upper film layers including the doped-GaN is not less than 1E18/cm 3 ; wherein the doping concentrations in the plurality of first upper film layers including the doped-GaN are maintained at the maximum doping concentration.

10 . The epitaxial structure according to claim 1 , wherein, in the upper super-lattice laminate, a maximum doping concentration of doping concentrations in the plurality of first upper film layers including the doped-GaN is not less than 1E18/cm 3 ; wherein the doping concentrations in the plurality of first upper film layers including the doped-GaN exhibit fixed and gradual changes, and the maximum doping concentration repeatedly appears in the plurality of the first upper film layers including the doped-GaN.

11 . The epitaxial structure according to claim 1 , wherein a material composition of the channel layer and a material composition of a final film layer of the upper super-lattice laminate are both gallium nitride that is not doped with the doping material (un-doped GaN).

Assignees

• Globalwafers Co Ltd

Inventors

• Sie Wei-Jie
• Liu Jia-Zhe
• Shih Ying-Ru

Classifications

• H10D30/4755

  having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs · CPC title

• H10D62/8171

  Doping structures, e.g. doping superlattices or nipi superlattices · CPC title

• H10D62/60

  Impurity distributions or concentrations · CPC title

• H10D62/824

  comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions · CPC title

• H10D30/798 Primary

  being provided in or under the channel regions · CPC title