Vertical type semiconductor devices and methods of manufacturing the same
US-2024172441-A1 · May 23, 2024 · US
being provided in or under the channel regions
being provided in or under the channel regions · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10D30/798 |
| Official title | {being provided in or under the channel regions} |
| Display label | being provided in or under the channel regions |
| Total patents | 1,487 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 169 |
| 2016 | 240 |
| 2017 | 240 |
| 2018 | 187 |
| 2019 | 157 |
| 2020 | 150 |
| 2021 | 100 |
| 2022 | 78 |
| 2023 | 75 |
| 2024 | 56 |
| 2025 | 30 |
| 2026 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Structure and Method for FinFET Device
US-2015380525-A1 · Dec 31, 2015 · US
Strained Channel Dynamic Random Access Memory Devices
US-2015380414-A1 · Dec 31, 2015 · US
Channel Strain Control for Nonplanar Compound Semiconductor Devices
US-2015380556-A1 · Dec 31, 2015 · US
Stain compensation in transistors
US-2015380557-A1 · Dec 31, 2015 · US
Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process
US-9224605-B2 · Dec 29, 2015 · US
Structure and method for SRAM FinFET device
US-9224736-B1 · Dec 29, 2015 · US
Body-tied, strained-channel multi-gate device and methods of manufacturing same
US-9214554-B2 · Dec 15, 2015 · US
Stress inducing contact metal in finfet cmos
US-2015357471-A1 · Dec 10, 2015 · US
Complex circuits utilizing fin structures
US-2015340291-A1 · Nov 26, 2015 · US
Stress inducing contact metal in FinFET CMOS
US-9196613-B2 · Nov 24, 2015 · US
Finfet and method for manufacturing the same
US-2015325699-A1 · Nov 12, 2015 · US
Finfets suitable for use in a high density sram cell
US-2015325597-A1 · Nov 12, 2015 · US
Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
US-9184290-B2 · Nov 10, 2015 · US
Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process
US-2015318176-A1 · Nov 5, 2015 · US
Semiconductor device
US-9178063-B2 · Nov 3, 2015 · US
FinFET with stressors
US-9171953-B2 · Oct 27, 2015 · US
Multi-gate devices with replaced-channels and methods for forming the same
US-9171925-B2 · Oct 27, 2015 · US
FinFET device with dual-strained channels and method for manufacturing thereof
US-9171904-B2 · Oct 27, 2015 · US
Transistor including a stressed channel, a method for fabricating the same, and an electronic device including the same
US-9171905-B2 · Oct 27, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10D30/798?
- CPC H10D30/798 is the Cooperative Patent Classification code for “being provided in or under the channel regions.”
- How many patents are filed under CPC H10D30/798 (being provided in or under the channel regions)?
- Our database includes 1,487 publications tagged with this CPC code.
- Is patent activity under CPC H10D30/798 growing?
- Publication counts under this code: 56 in 2024 vs 30 in 2025 (latest complete years).