Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-2021305066-A1
Application number	US-202117212225-A
Country	US
Kind code	A1
Filing date	Mar 25, 2021
Priority date	Mar 26, 2020
Publication date	Sep 30, 2021
Grant date	—

Abstract

A substrate processing method includes holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

First claim

We claim:

1 . A substrate processing method, comprising:
holding a substrate on which a boron-containing silicon film is formed; supplying an oxidative aqueous solution including hydrofluoric acid and nitric acid to the held substrate; and etching the boron-containing silicon film of the substrate with the oxidative aqueous solution.

2 . The substrate processing method of claim 1 ,
wherein a mixing ratio between the hydrofluoric acid and the nitric acid in the oxidative aqueous solution is in a range from 1:1 to 1:10.

3 . The substrate processing method of claim 2 ,
wherein a temperature of the oxidative aqueous solution is in a range from 20° C. to 80° C.

4 . The substrate processing method of claim 2 ,
wherein the oxidative aqueous solution further includes acetic acid.

5 . The substrate processing method of claim 2 ,
wherein in the supplying of the oxidative aqueous solution, the oxidative aqueous solution is supplied to a peripheral portion of the substrate.

6 . The substrate processing method of claim 2 ,
wherein in the supplying of the oxidative aqueous solution, the oxidative aqueous solution is supplied to a rear surface of the substrate.

7 . The substrate processing method of claim 2 ,
wherein in the supplying of the oxidative aqueous solution, the oxidative aqueous solution is supplied to an entire surface of the substrate.

8 . The substrate processing method of claim 1 ,
wherein a temperature of the oxidative aqueous solution is in a range from 20° C. to 80° C.

9 . The substrate processing method of claim 1 ,
wherein the oxidative aqueous solution further includes acetic acid.

10 . The substrate processing method of claim 1 ,
wherein in the supplying of the oxidative aqueous solution, the oxidative aqueous solution is supplied to a peripheral portion of the substrate.

11 . The substrate processing method of claim 1 ,
wherein in the supplying of the oxidative aqueous solution, the oxidative aqueous solution is supplied to a rear surface of the substrate.

12 . The substrate processing method of claim 1 ,
wherein in the supplying of the oxidative aqueous solution, the oxidative aqueous solution is supplied to an entire surface of the substrate.

13 . A substrate processing apparatus, comprising:
a substrate holder configured to hold a substrate on which a boron-containing silicon film is formed; and a processing liquid supply configured to supply an oxidative aqueous solution including hydrofluoric acid and nitric acid to the substrate held by the substrate holder.

14 . The substrate processing apparatus of claim 13 ,
wherein the processing liquid supply supplies the oxidative aqueous solution to a rear surface of the substrate.

15 . The substrate processing apparatus of claim 14 ,
wherein the substrate holder holds the substrate rotatably, and the processing liquid supply supplies the oxidative aqueous solution to the rear surface of the substrate being rotated at a rotation number ranging from 200 rpm to 1000 rpm.

16 . The substrate processing apparatus of claim 13 ,
wherein the processing liquid supply supplies the oxidative aqueous solution to a peripheral portion of the substrate.

17 . The substrate processing apparatus of claim 16 ,
wherein the substrate holder holds the substrate rotatably, and the processing liquid supply supplies the oxidative aqueous solution to the peripheral portion of the substrate being rotated at a rotation number ranging from 400 rpm to 1000 rpm.

Assignees

• Tokyo Electron Ltd

Inventors

• Kang Song Yun
• Tsuda Toshitake
• Sekiguchi Kenji
• Yonezawa Syuhei
• Kagawa Koji

Classifications

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/54

  Cleaning of wafer edges · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/6923

  the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG · CPC title