Chemical mechanical polishing cleaning system with temperature control for defect reduction

Patent metadata

Field	Value
Publication number	US-2021272798-A1
Application number	US-202016807086-A
Country	US
Kind code	A1
Filing date	Mar 2, 2020
Priority date	Mar 2, 2020
Publication date	Sep 2, 2021
Grant date	—

Abstract

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

First claim

What is claimed is:

1 . A cleaning system, comprising:
at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution; and a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module, wherein the cleaning solution supply system comprises at least one temperature control system, the at least one temperature control system comprising:
a heating device configured to heat the cleaning solution;
a cooling device configured to cool the cleaning solution;
a temperature sensor configured to monitor a temperature of the cleaning solution; and
a temperature controller configured to control the heating device and the cooling device.

2 . The cleaning system of claim 1 , wherein the at least one cleaning module comprises a megasonic cleaning module configured to remove the contaminants from a front side surface and a backside surface of the substrate using megasonic energy.

3 . The cleaning system of claim 1 , wherein the at least one cleaning module comprises a pre-cleaning module configured to remove the contaminants from a front side surface of the substrate using a pad.

4 . The cleaning system of claim 1 , wherein the at least one cleaning module comprises a brush cleaning module configured to remove the contaminants from a front side and a backside of the substrate using a pair of brushes.

5 . The cleaning system of claim 1 , wherein the heating device is configured to heat the cleaning solution from about 30° C. to about 100° C.

6 . The cleaning system of claim 1 , wherein the cooling device is configured to cool the cleaning solution from about −10° C. to 10° C.

7 . The cleaning system of claim 1 , wherein the temperature sensor comprises a thermocouple, a resistance temperature detector, or a thermistor.

8 . The cleaning system of claim 1 , wherein the cleaning solution comprises an acidic solution or a base solution.

9 . The cleaning system of claim 1 , wherein the cleaning solution comprises hydrofluoric acid, phosphoric acid, ammonium hydroxide, hydrogen peroxide, or a mixture thereof.

10 . The cleaning system of claim 1 , wherein the cleaning solution comprises deionized water.

11 . The cleaning system of claim 1 , wherein the cleaning solution comprises chloroform, dichloromethane, or benzene, acetone, or mixtures thereof.

12 . A chemical mechanical polishing (CMP) system, comprising:
a polishing system configured to polish a substrate; and a cleaning system configured to remove contaminants remaining on the substrate after the substrate has been polished in the polishing system, the cleaning system comprising:
a plurality of cleaning modules, wherein a first cleaning module of the plurality of cleaning modules is configured to perform a first cleaning process and a second cleaning module of the plurality of cleaning modules is configured to perform a second cleaning process; and
a cleaning solution supply system configured to supply a first cleaning solution of a first temperature to the first cleaning module and a second cleaning solution of a second temperature to the second cleaning module, wherein the first temperature is different from the second temperature.

13 . The CMP system of claim 12 , wherein the first cleaning solution is different from the second cleaning solution.

14 . The CMP system of claim 12 , wherein the cleaning solution supply system comprises:
a plurality of cleaning fluid source tanks each of which is configured to hold a cleaning fluid; a chemical mixer configured to mix two or more cleaning fluids from the plurality of cleaning fluid source tanks; and a temperature control system, wherein the temperature control system is configured to heat or cool a cleaning solution from respective cleaning fluid source tanks or the chemical mixer to a predetermined temperature.

15 . The CMP system of claim 14 , wherein the temperature control system comprises:
a heating device configured to heat the cleaning solution; a cooling device configured to cool the cleaning solution; a temperature sensor configured to monitor a temperature of the cleaning solution; and a temperature controller configured to control the heating device and the cooling device.

16 . A method of cleaning a substrate following a chemical mechanical polishing (CMP) process, comprising:
providing a substrate in need of removing CMP contaminants into a cleaning module; supplying a cleaning solution to the cleaning module, the cleaning solution having a temperature above or below an ambient temperature; and removing the CMP contaminants from the substrate using the cleaning solution.

17 . The method of claim 16 , further comprising heating the cleaning solution from about 30° C. to about 100° C. using a heating device.

18 . The method of claim 16 , further comprising cooling the cleaning solution from about −10° C. to about 10° C. using a cooling device.

19 . The method of claim 16 , further comprising monitoring the temperature of the cleaning solution using a temperature sensor.

20 . The method of claim 16 , further comprising adjusting the temperature of the cleaning solution based on types of the CMP contaminants on the substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Ssutzu
• Huang Gin-Chen
• Tsai Ya-Ting
• Chen Ying-Tsung
• Chen Kei-Wei

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0412

  using mainly scrubbing means, e.g. brushes · CPC title

• H10P70/237 Primary

  the processing being a planarisation of insulating layers · CPC title