Manufacturing Method of Semiconductor Device
US-2016005604-A1 · Jan 7, 2016 · US
US2021115565A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021115565-A1 |
| Application number | US-201816496064-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 22, 2018 |
| Priority date | Mar 23, 2017 |
| Publication date | Apr 22, 2021 |
| Grant date | — |
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A plating method includes preparing a substrate having a surface including an adhesive material portion made of a material to which a catalyst easily adheres and a non-adhesive material portion to which the catalyst is difficult to attach; imparting the catalyst to the substrate by supplying a catalyst solution onto the substrate; removing, by supplying a catalyst removing liquid containing a reducing agent onto the substrate, the catalyst from the non-adhesive material portion while allowing the catalyst to be left on a surface of the adhesive material portion; and forming a plating layer selectively on the adhesive material portion by supplying a plating liquid onto the substrate.
Opening claim text (preview).
We claim: 1 . A plating method, comprising: preparing a substrate having a surface including an adhesive material portion made of a material to which a catalyst easily adheres and a non-adhesive material portion to which the catalyst is difficult to attach; imparting the catalyst to the substrate by supplying a catalyst solution onto the substrate; removing, by supplying a catalyst removing liquid containing a reducing agent onto the substrate, the catalyst from the non-adhesive material portion while allowing the catalyst to be left on a surface of the adhesive material portion; and forming a plating layer selectively on the adhesive material portion by supplying a plating liquid onto the substrate. 2 . The plating method of claim 1 , wherein the plating liquid is an electroless plating liquid containing a reducing agent, and the catalyst removing liquid contains the same reducing agent as the reducing agent contained in the electroless plating liquid. 3 . The plating method of claim 2 , wherein the catalyst removing liquid is prepared by diluting the reducing agent contained in the electroless plating liquid with pure water. 4 . The plating method of claim 2 , wherein the reducing agent contained in the electroless plating liquid is dimethylamineborane (DMAB). 5 . The plating method of claim 2 , wherein the forming of the plating layer is performed without performing a rinsing processing of removing the catalyst removing liquid from the substrate after performing the removing of the catalyst. 6 . The plating method of claim 1 , wherein the catalyst removing liquid is alkaline. 7 . The plating method of claim 1 , wherein the non-adhesive material portion is made of silicon oxide as a main component, and the adhesive material portion is made of silicon nitride as a main component. 8 . The plating method of claim 1 , wherein the substrate includes a base member made of the adhesive material portion and a core member which is protruded from the base member and is made of the non-adhesive material portion. 9 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a plating apparatus to perform a plating method as claimed in claim 1 . 10 . A plating apparatus, comprising: a substrate holder configured to hold a substrate; a catalyst imparting device configured to impart a catalyst solution to the substrate; a catalyst removing liquid supply configured to supply a catalyst removing liquid onto the substrate; a plating liquid supply configured to supply a plating liquid onto the substrate; and a controller configured to control the plating apparatus to perform a plating method as claimed in claim 1 .
by chemical means · CPC title
using masks for insulating materials · CPC title
characterised by their composition, e.g. multilayer masks · CPC title
Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells · CPC title
by masking · CPC title
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