Method of manufacturing semiconductor device
US-2024297042-A1 · Sep 5, 2024 · US
US2016005604A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016005604-A1 |
| Application number | US-201414481008-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 9, 2014 |
| Priority date | Jul 1, 2014 |
| Publication date | Jan 7, 2016 |
| Grant date | — |
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According to an embodiment, a manufacturing method of a semiconductor device includes: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask.
Opening claim text (preview).
1 . A manufacturing method of a semiconductor device comprising: forming a first film on a processing target by using a first material; forming a second film on the first film by using a second material; selectively removing the second and first films to provide an opening pierced in the second and first films; selectively forming a metal film on an inner surface of the opening in the first film; and processing the processing target by using the metal film as a mask.…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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