Planarization process, apparatus and method of manufacturing an article

Patent metadata

Field	Value
Publication number	US-2021050246-A1
Application number	US-201916542066-A
Country	US
Kind code	A1
Filing date	Aug 15, 2019
Priority date	Aug 15, 2019
Publication date	Feb 18, 2021
Grant date	—

Abstract

A method, comprising retaining a superstrate with a superstrate chuck; applying a pressure to deflect the superstrate toward a substrate, deflection of the superstrate being gradually extended along a radial direction; maintaining a vacuum applied to a perimeter of the superstrate and continuously retaining the superstrate with the chuck while the deflecting the superstrate by the pressure; releasing the vacuum from the perimeter of the superstrate; and releasing the superstrate from the chuck.

First claim

What is claimed is:

1 . A method, comprising:
retaining a superstrate with a superstrate chuck; applying a pressure to deflect the superstrate toward a substrate, deflection of the superstrate being gradually extended along a radial direction; maintaining a vacuum applied to a perimeter of the superstrate and continuously retaining the superstrate with the chuck while the deflecting the superstrate by the pressure; releasing the vacuum from the perimeter of the superstrate; and releasing the superstrate from the chuck.

2 . The method of claim 1 , wherein:
the superstrate chuck includes a center zone aligned with the center portion of the superstrate and a series of ring zones, the series of zones including a peripheral ring zone aligned with the perimeter of the superstrate and at least one inner ring zone between the center zone and the peripheral ring zone; and applying the pressure to deflect the superstrate further including:
applying the pressure through the center zone and maintaining the vacuum applied through the series of ring zones;
releasing the vacuum from the ring zone and applying the pressure through the inner ring zone after the center portion of the superstrate has been deflected by the pressure; and
releasing the vacuum from the peripheral ring zone.

3 . The method of claim 2 , wherein the series of ring zones includes a plurality of inner ring zones, the vacuum is sequentially released from inner zones, and the pressure is sequentially applied to superstrate through the inner rings in the radial direction.

4 . The method of claim 2 , further comprising:
dispensing a formable material contact on the substrate; contacting the superstrate with the formidable material contact; and applying the pressure to superstrate corresponding to a flow front of the formable material contact.

5 . The method of claim 4 , wherein the formable material contact is dispensed as a plurality of droplets deposited on the substrate.

6 . The method of claim 2 , wherein the pressure is applied to the center zone to control an initial height at a determined range and maintaining a predetermined curvature of the superstrate.

7 . The method of claim 1 , further comprising:
curing the formable material contact after the superstrate is released from the chuck; moving a lateral position of the superstrate relative to a curing source during curing; re-retaining the superstrate with the chuck; and separating the superstrate from the cured formable material contact.

8 . A multi-zone chucking system, comprising:
a substrate chuck for retaining a substrate; a superstrate chuck for retaining a superstrate; and a pressure source configured to apply pressure and vacuum to the superstrate via a plurality ports of the superstrate chuck, wherein the pressure is applied sequentially to a plurality of regions of the superstrate such that the superstrate is deflected towards the substrate gradually from one region to another, and the vacuum is applied to the perimeter of the superstrate while the superstrate is deflected by the pressure.

9 . The multi-zone chucking system of claim 8 , wherein:
the superstrate chuck includes a plurality of concentric lands defining the superstrate chuck into a center zone and a series of ring zones, the series of ring zones includes a peripheral zone to be aligned with a perimeter of the superstrate and at least one inner ring zone between the center zone and the peripheral ring zone; the pressure source is configured to sequentially apply the pressure via the ports in the center zones while applying the vacuum via the ports in the series of ring zones; apply the pressure via the ports in the inner ring zone and maintaining vacuum at peripheral ring zone; and release the vacuum from the ports in the peripheral ring zone.

10 . The multi-zone chucking system of claim 9 , wherein the center zone of the superstrate chuck includes an air cavity to be aligned with a center of the superstrate while contacting the superstrate with the formable material.

11 . The multi-zone chucking system of claim 9 , further comprising a formable material dispenser configured to dispensing a plurality of droplets of the formable material on the substrate, wherein:
the superstrate chuck is configured to advance the superstrate to contact with the formable material on the substrate; and the pressure source is configured to sequentially apply the pressure to the regions corresponding to a flow front of the formable material.

12 . The multi-zone chucking system of claim 11 , further comprising a curing source configured to cure the formable material after the superstrate is released from the superstrate chuck.

13 . The multi-zone chucking system of claim 12 , wherein the substrate chuck is configured to move a lateral position of the substrate relative to the curing source.

14 . The multi-zone chucking system of claim 12 , wherein the curing source is configured to control a size of light beam with reference to a diameter of the superstrate during curing.

15 . The multi-zone chucking system of claim 12 , wherein the curing source is configured to control a tilting angle of the light beam incident on the superstrate.

16 . A method for forming a layer, comprising:
dispensing a formable material on a substrate; retaining a superstrate with a chuck, and advancing the superstrate to contact with the formable material by the chuck; applying a pressure sequentially to a plurality of regions of the superstrate such that the superstrate is deflected towards the substrate gradually from one region to another; applying a vacuum to a perimeter of the superstrate while the superstrate is deflected by the pressure; releasing the superstrate from the chuck; and curing the formable material after the chuck with a curing source.

17 . The method of claim 15 , further comprising moving a lateral position of the substrate relative to the curing source during curing.

18 . The method of claim 15 , further comprising controlling a size of light beam of the curing source with reference to a diameter of the superstrate.

19 . The method of claim 15 , further comprising controlling a tilting angle of the light beam incident on the superstrate.

20 . The method of claim 15 , further comprising:
re-retaining the superstrate by the superstrate chuck; and separating the superstrate from the cured formable material.

Assignees

• Canon Kk

Inventors

• Choi Byung-Jin
• Bamesberger Seth J
• Saito Masaki
• Ozturk Ozkan

Classifications

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• H10P72/78 Primary

  using vacuum or suction, e.g. Bernoulli chucks · CPC title

• H10P72/7624 Primary

  characterised by the mechanical construction of the susceptor, stage or support · CPC title

• H10P72/7612

  characterised by lifting arrangements, e.g. lift pins · CPC title

• H10P72/0442

  Apparatus for placing on an insulating substrate, e.g. tape · CPC title