Substrate liquid processing apparatus, substrate liquid processing method and recording medium

Patent metadata

Field	Value
Publication number	US-2021002770-A1
Application number	US-201816767278-A
Country	US
Kind code	A1
Filing date	Nov 22, 2018
Priority date	Nov 28, 2017
Publication date	Jan 7, 2021
Grant date	—

Abstract

A substrate processing apparatus includes a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer. A temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

First claim

1 . A substrate liquid processing apparatus, comprising:
a substrate holder configured to horizontally hold and rotate a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and a pre-cleaning liquid supply configured to supply a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being held and rotated by the substrate holder, to thereby pre-clean the base metal layer, wherein a temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

2 . The substrate liquid processing apparatus of claim 1 , further comprising:
a plating liquid supply configured to supply a plating liquid onto the pre-cleaned substrate.

3 . The substrate liquid processing apparatus of claim 2 ,
wherein the temperature of the pre-cleaning liquid is within ±5° C. of a temperature of the plating liquid.

4 . The substrate liquid processing apparatus of claim 1 ,
wherein the temperature of the pre-cleaning liquid is in a range from 60° C. to 70° C.

5 . The substrate liquid processing apparatus of claim 1 , further comprising:
an additional pre-cleaning liquid supply configured to supply an additional pre-cleaning liquid onto the substrate before being pre-cleaned, to thereby accelerate oxidation of the base metal layer.

6 . The substrate liquid processing apparatus of claim 1 , further comprising:
a deaerating device configured to deaerate the pre-cleaning liquid before being supplied onto the substrate.

7 . A substrate liquid processing method, comprising:
horizontally holding and rotating a substrate which has a recess and a base metal layer exposed from a bottom surface of the recess; and pre-cleaning the base metal layer by supplying a pre-cleaning liquid such as dicarboxylic acid or tricarboxylic acid onto the substrate being rotated, wherein a temperature of the pre-cleaning liquid on the substrate is equal to or higher than 40° C.

8 . The substrate liquid processing method of claim 7 , further comprising:
supplying a plating liquid onto the pre-cleaned substrate.

9 . The substrate liquid processing method of claim 8 ,
wherein the temperature of the pre-cleaning liquid is within ±5° C. of a temperature of the plating liquid.

10 . The substrate liquid processing method of claim 8 ,
wherein the supplying of the plating liquid is performed after the pre-cleaning of the base metal layer without rinsing the substrate in between.

11 . The substrate liquid processing method of claim 7 ,
wherein the temperature of the pre-cleaning liquid is in a range from 60° C. to 70° C.

12 . The substrate liquid processing method of claim 7 , further comprising:
supplying an additional pre-cleaning liquid onto the substrate before being pre-cleaned, to thereby accelerate oxidation of the base metal layer.

13 . The substrate liquid processing method of claim 7 , further comprising:
deaerating the pre-cleaning liquid before being supplied onto the substrate.

14 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a substrate liquid processing apparatus to perform a substrate liquid processing method as claimed in claim 7 .

Assignees

• Tokyo Electron Ltd

Inventors

• Tanaka Takashi
• Fujita Keiichi
• Inatomi Yuichiro

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• H10P72/0406

  for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• C23C18/2073

  Multistep pretreatment · CPC title