Method of etching silicon-containing film, computer-readable storage medium, and apparatus for etching silicon-containing film

Patent metadata

Field	Value
Publication number	US-2019355589-A1
Application number	US-201916413068-A
Country	US
Kind code	A1
Filing date	May 15, 2019
Priority date	May 16, 2018
Publication date	Nov 21, 2019
Grant date	—

Abstract

There is provided a method of etching a silicon-containing film formed on a substrate, the method including: etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F2 gas and the second fluorine-containing gas including at least a ClF3 gas, an IF7 gas, an IF5 gas or an SF6 gas.

First claim

What is claimed is:

1 . A method of etching a silicon-containing film formed on a substrate, the method comprising:
etching the silicon-containing film by using both a first fluorine-containing gas and a second fluorine-containing gas, the first fluorine-containing gas including at least an F 2 gas and the second fluorine-containing gas including at least a ClF 3 gas, an IF 7 gas, an IF 5 gas or an SF 6 gas.

2 . The method of claim 1 , further comprising: alternately supplying the first fluorine-containing gas and the second fluorine-containing gas.

3 . The method of claim 2 , further comprising: alternately supplying the first fluorine-containing gas and the second fluorine-containing gas in a repetitive manner.

4 . The method of claim 1 , further comprising: simultaneously supplying the first fluorine-containing gas and the second fluorine-containing gas.

5 . A non-transitory computer-readable storage medium storing a program that operates on a computer of a controller for controlling an etching apparatus and that causes the computer to perform the etching method of claim 1 by the etching apparatus.

6 . An apparatus for etching a silicon-containing film formed on a substrate, comprising:
a chamber in which the substrate is accommodated; and a gas supply part configured to supply both a first fluorine-containing gas and a second fluorine-containing gas onto the silicon-containing film, the first fluorine-containing gas including at least an F 2 gas, and the second fluorine-containing gas including at least a ClF 3 gas, an IF 7 gas, an IF 5 gas or an SF 6 gas.

Assignees

• Tokyo Electron Ltd

Inventors

• Orii Takehiko
• Asada Yasuo
• Lin Jun
• Hagiwara Ayano
• Irie Shinji
• Tanouchi Kenji
• Wada Kakeru

Classifications

• H10P72/0421 Primary

  for drying etching · CPC title

• H10P50/266 Primary

  by vapour etching only · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H10P50/642 Primary

  Chemical etching · CPC title