Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
Plating method, plating apparatus and recording medium
US2019267242A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2019267242-A1 |
| Application number | US-201716345385-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 29, 2017 |
| Priority date | Oct 27, 2016 |
| Publication date | Aug 29, 2019 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.
First claim
Opening claim text (preview).
We claim: 1 . A plating method, comprising: preparing a substrate having a non-plateable material portion and a plateable material portion formed on a surface thereof; imparting a catalyst selectively to the plateable material portion by supplying a catalyst solution onto the substrate; and forming a plating layer selectively on the plateable material portion by supplying a plating liquid onto the substrate, wherein a pH of the catalyst solution is previously adjusted such that the plating layer is suppressed from being precipitated on the non-plateable material portion while being facilitated to be precipitated on the plateable material portion. 2 . The plating method of claim 1 , wherein the non-plateable material portion is made of SiO 2 as a main component, the plateable material portion is made of SiN as a main component, and the pH falls within a range from 2 to 3. 3 . The plating method of claim 1 , wherein the substrate includes a base member made of the plateable material portion and a core member which is protruded from the base member and is made of the non-plateable material portion. 4 . A plating apparatus, comprising: a substrate holding unit configured to hold a substrate having a plateable material portion and a non-plateable material portion on a surface thereof; a catalyst imparting unit configured to impart a catalyst selectively to the plateable material portion by supplying a catalyst solution onto the substrate; and a plating liquid supply unit configured to form a plating layer selectively on the plateable material portion by supplying a plating liquid onto the substrate, wherein a pH of the catalyst solution is previously adjusted such that the plating layer is suppressed from being precipitated on the non-plateable material portion while being facilitated to be precipitated on the plateable material portion. 5 . The plating apparatus of claim 4 , wherein the non-plateable material portion is made of SiO 2 as a main component, the plateable material portion is made of SiN as a main component, and the pH falls within a range from 2 to 3. 6 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a plating apparatus to perform a plating method as claimed in claim 1 .
Assignees
Inventors
Classifications
- H10P14/46Primary
using a liquid · CPC title
Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers · CPC title
Specific elements or parts of the apparatus · CPC title
by direct patterning · CPC title
using reducing agents · CPC title
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Frequently asked questions
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- What does patent US2019267242A1 cover?
- A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 …
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P14/46. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Aug 29 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).