Selective electroless electrochemical atomic layer deposition in an aqueous solution without external voltage bias

Patent metadata

Field	Value
Publication number	US-2019048472-A1
Application number	US-201816054428-A
Country	US
Kind code	A1
Filing date	Aug 3, 2018
Priority date	Aug 14, 2017
Publication date	Feb 14, 2019
Grant date	—

Abstract

A method of performing electroless electrochemical atomic layer deposition is provided and includes: providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, where the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate. The exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.

First claim

What is claimed is:

1 . A method of performing electroless electrochemical atomic layer deposition comprising:
providing a substrate including an exposed upper metal layer; exposing the substrate to a first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, wherein the first precursor solution is an aqueous solution including a reducing agent; subsequent to the forming of the sacrificial metal monolayer, rinsing the substrate; subsequent to the rinsing of the substrate, exposing the substrate to a second precursor solution to replace the sacrificial metal monolayer with a first deposition layer; and subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinsing the substrate, wherein the exposure of the substrate to the first precursor solution and the exposure of the substrate to the second precursor solution are electroless processes.

2 . The method of claim 1 , wherein the first precursor solution includes zinc sulfate.

3 . The method of claim 1 , wherein the first precursor solution includes a metal salt, carboxylic acid, the reducing agent, and a pH adjuster.

4 . The method of claim 3 , wherein:
the metal salt includes zinc sulfate; and the pH adjuster includes ammonium hydroxide.

5 . The method of claim 1 , wherein:
the first precursor solution includes a metal salt, carboxylic acid, the reducing agent, and a pH adjuster; the metal salt includes zinc sulfate; the reducing agent includes titanium; and the pH adjuster includes ammonium hydroxide.

6 . The method of claim 1 , wherein the first precursor solution includes:
a first predetermined amount of a first mixture of zinc sulfate and ammonium hydroxide; a second predetermined amount of a second mixture of titanium chloride and ammonium citrate; and a third predetermined amount of ammonium hydroxide in addition to the ammonium hydroxide included in the first mixture.

7 . The method of claim 1 , wherein the sacrificial metal monolayer includes zinc.

8 . The method of claim 1 , wherein the reducing agent includes titanium.

9 . The method of claim 1 , wherein the second precursor solution includes an aqueous solution of salt and metal ions.

10 . The method of claim 1 , wherein the second precursor solution includes copper sulfate.

11 . The method of claim 1 , wherein the second precursor solution includes ruthenium nitrosyl sulfate or ruthenium nitrosyl chloride.

12 . The method of claim 1 , wherein the second precursor solution includes chloroplatinic acid.

13 . The method of claim 1 , wherein the second precursor solution includes a metal salt.

14 . The method of claim 13 , wherein the metal salt includes copper, rutenhium or platinum.

15 . The method of claim 1 , wherein the second precursor solution includes a surface limited redox replacement electrolyte.

16 . The method of claim 15 , wherein the surface limited redox replacement electrolyte includes copper sulfate, citric acid, and sulfuric acid.

17 . The method of claim 1 , wherein the first deposition layer includes copper, cobalt, ruthenium, or platinum.

18 . The method of claim 1 , further comprising:
detecting at least one of a current level or a voltage at a surface of the exposed upper metal layer via a probe; and based on the at least one of the current level or the voltage, adjusting at least one of a pH level, a concentration of the first precursor solution, or a temperature to maintain the at least one of the current level within a first predetermined range or the voltage within a second predetermined range for electroless electrochemical atomic layer deposition of the sacrificial metal monolayer.

19 . The method of claim 18 , comprising, based on the at least one of the current level or the voltage, adjusting the pH level to be between 9 and 10, wherein the pH level is a pH level of the first precursor solution.

20 . The method of claim 18 , wherein:
the first precursor solution includes titanium chloride and zinc sulfate; and the pH level, an amount of the titanium chloride, an amount of the zinc sulfate and the temperature are adjusted to maintain the at least one of the current level within the first predetermined range or the voltage within the second predetermined range for electroless electrochemical atomic layer deposition of the sacrificial metal monolayer.

21 . A substrate processing system comprising:
a processing chamber; a substrate support disposed in the processing chamber and configured to hold a substrate, wherein the substrate includes an exposed upper metal layer; at least one injector configured to receive a first precursor solution and a second precursor solution; and a system controller configured to
perform electroless electrochemical atomic layer deposition including exposing the substrate to the first precursor solution to create a sacrificial metal monolayer on the exposed upper metal layer via underpotential deposition, wherein the first precursor solution is an aqueous solution including a reducing agent,
subsequent to the forming of the sacrificial metal monolayer, rinse the substrate,
subsequent to the rinsing of the substrate, expose the substrate to the second precursor solution to replace the sacrificial metal monolayer with a first deposition layer, and
subsequent to replacing the sacrificial metal monolayer with the first deposition layer, rinse the substrate,
wherein the exposure of the substrate to the second precursor is electroless processes.

22 . The substrate processing system of claim 21 , wherein an interior of the processing chamber is at an ambient temperature, at least partially filled with nitrogen and void of oxygen.

23 . The substrate processing system of claim 21 , wherein the first precursor solution includes a metal salt, carboxylic acid, the reducing agent, and a pH adjuster.

24 . The substrate processing system of claim 23 , wherein:
the metal salt includes zinc sulfate; and the pH adjuster includes ammonium hydroxide.

25 . The substrate processing system of claim 21 , wherein:
the first precursor solution includes a metal salt, carboxylic acid, the reducing agent, and a pH adjuster; the metal salt includes zinc sulfate; the reducing agent includes titanium; and the pH adjuster includes ammonium hydroxide.

26 . The substrate processing system of claim 21 , wherein the first precursor solution includes:
a first predetermined amount of a first mixture of zinc sulfate and ammonium hydroxide; a second predetermined amount of a second mixture of titanium chloride and ammonium citrate; and a third predetermined amount of ammonium hydroxide in addition to the ammonium hydroxide included in the first mixture.

27 . The substrate processing system of claim 21 , wherein the sacrificial metal monolayer includes zinc.

28 . The substrate processing system of claim 21 , wherein the second precursor solution includes an aqueous solution of salt and metal ions.

29 . The substrate processing system of claim 21 , wherein the second precursor solution includes copper sulfate, ruthenium nitrosyl sulfate, ruthenium nitrosyl chloride or chloroplatinic acid.

30 . The substrate processing system of claim 21 , wherein the second precursor soluti

Assignees

• Lam Res Corp

Inventors

• Joi Aniruddha
• Venkatraman Kailash
• Dordi Yezdi

Classifications

• H10P72/0476

  comprising at least one plating chamber · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10P14/46

  using a liquid · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title