Substrate drying apparatus, facility of manufacturing semiconductor device, and method of drying substrate

Patent metadata

Field	Value
Publication number	US-2018366348-A1
Application number	US-201715845236-A
Country	US
Kind code	A1
Filing date	Dec 18, 2017
Priority date	Jun 15, 2017
Publication date	Dec 20, 2018
Grant date	—

Abstract

Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.

First claim

What is claimed is:

1 . A substrate drying apparatus, comprising:
a chamber configured to dry a substrate at a first temperature; a first reservoir configured to store a first supercritical fluid having a second temperature that is less than the first temperature; a second reservoir configured to store a second supercritical fluid having a third temperature that is greater than the first temperature; and a supply unit, connected between the chamber and the first reservoir and/or the second reservoir wherein the supply unit is configured to supply the first supercritical fluid and/or the second supercritical fluid into the chamber.

2 . The apparatus of claim 1 , wherein the supply unit is configured to sequentially supply the first and second supercritical fluids to increase a pressure in the chamber.

3 . The apparatus of claim 2 , wherein, when the pressure of the chamber reaches a critical point of the first supercritical fluid, the supply unit is configured to provide the chamber with the second supercritical fluid.

4 . The apparatus of claim 3 , wherein, when the second temperature is 31.1° C., the critical point is 72 bar.

5 . The apparatus of claim 1 , wherein the first temperature is in a range between 40° C. to 80° C.

6 . The apparatus of claim 5 , further comprising:
a third reservoir configured to store a third supercritical fluid at the first temperature.

7 . The apparatus of claim 6 , wherein, when the second supercritical fluid reaches a pressure associated with a saturation duration, the supply unit provides the chamber with the third supercritical fluid.

8 . The apparatus of claim 7 , wherein the pressure associated with the saturation duration is 150 bar.

9 . The apparatus of claim 1 , wherein the supply unit comprises:
supply lines connecting the chamber to the first reservoir and/or second reservoir; valves engaged with corresponding ones of the supply lines and controlling corresponding supplies of the first supercritical fluid and/or second supercritical fluid; and filters engaged with corresponding ones of the supply lines, wherein the filters are configured to filter pollutions in the first supercritical fluid and/or second supercritical fluid.

10 . The apparatus of claim 9 , wherein one of the filters comprises a metal sintering filter.

11 . A facility for of manufacturing a semiconductor device, comprising:
a substrate polishing apparatus that is configured to polish a substrate; a substrate cleaning apparatus that is configured to clean the substrate; and a substrate drying apparatus that is configured to dry the substrate, wherein the substrate drying apparatus comprises:
a chamber that is configured to dry the substrate at a first temperature;
a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature;
a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature; and
a supply unit that is connected between the chamber and the first reservoirs and/or the second reservoir,
wherein the supply unit is configured to provide the chamber with the first supercritical fluid and/or the second supercritical fluid.

12 . The facility of claim 11 , wherein the substrate cleaning apparatus uses isopropyl alcohol to rinse the substrate,
wherein the first temperature is less than an evaporation temperature of the isopropyl alcohol.

13 . The facility of claim 12 , wherein the first temperature is in a range between 40° C. to 80° C.

14 . The facility of claim 13 , wherein the second temperature is in a range between 30° C. to 39° C.

15 . The facility of claim 13 , wherein the third temperature is in a range between 100° C. to 200° C.

16 . A method of drying a substrate, the method comprising:
heating a substrate in a chamber to a first temperature; providing a first supercritical fluid at a second temperature that is less than the first temperature, on the substrate; and providing a second supercritical fluid at a third temperature greater than the first temperature, on the substrate.

17 . The method of claim 16 , wherein, when the first supercritical fluid reaches a critical point, the second supercritical fluid is provided on the substrate.

18 . The method of claim 17 , wherein, when the second temperature of the first supercritical fluid is 31.1° C., the critical point is 72 bar.

19 . The method of claim 16 , wherein, when the first temperature is within a range from 40 ° C. to 80 ° C., the third temperature is within a range from 100 ° C. to 200 ° C.

20 . The method of claim 16 , further comprising, when the second supercritical fluid reaches a saturation pressure, providing a third supercritical fluid having a fourth temperature that is at the same as the first temperature on the substrate.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Yong-Jhin
• Kim Young-Hoo
• Jeong Jihoon
• Kim Yungjun
• Lee Kuntack

Classifications

• H10P72/0472

  comprising at least one polishing chamber · CPC title

• H10P72/0411

  for wet cleaning or washing · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0456

  in-line arrangement · CPC title

• H10P72/0434

  mainly by convection · CPC title