Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition

Patent metadata

Field	Value
Publication number	US-2018308701-A1
Application number	US-201715492976-A
Country	US
Kind code	A1
Filing date	Apr 20, 2017
Priority date	Apr 20, 2017
Publication date	Oct 25, 2018
Grant date	—

Abstract

Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.

First claim

1 . A method comprising:
providing a substrate having one or more features, each feature comprising a feature opening; and performing multiple deposition cycles to deposit a cobalt layer that is conformal to the one or more features, wherein each deposition cycle comprises: exposing the feature to a dose of a cobalt precursor to form a layer of adsorbed cobalt precursor on the one or more features; exposing the layer of adsorbed cobalt precursor to a dose of a co-reactant to react with the cobalt precursor in the layer of adsorbed cobalt precursor on the one or more features; and exposing the feature to a dose of a mixture of the co-reactant and a nitrogen-containing cobalt growth inhibitor.

2 . The method of claim 1 , wherein exposing the layer of adsorbed cobalt precursor to the dose of the co-reactant to react with the cobalt precursor in the layer of adsorbed cobalt precursor on the one or more features is performed prior to exposing the feature to the dose of the mixture of the co-reactant and the nitrogen-containing cobalt growth inhibitor.

3 . The method of claim 1 , wherein exposing the layer of adsorbed cobalt precursor to the dose of the co-reactant to react with the cobalt precursor in the layer of adsorbed cobalt precursor on the one or more features is performed after exposing the feature to the dose of the mixture of the co-reactant and the nitrogen-containing cobalt growth inhibitor.

4 . The method of claim 1 , wherein the cobalt precursor has a structure according to (I):

where R 1 is C 1 -C 8 -alkyl, R 2 is C 1 -C 8 alkyl, x is zero, 1 or 2; and y is zero or 1.

5 . The method of claim 1 , wherein the cobalt precursor has a structure according to (II).

6 . The method of claim 1 , wherein the cobalt precursor is selected from the group consisting of dicarbonyl cyclopentadienyl cobalt, cobalt carbonyl, a cobalt amidinate precursor, a cobalt diazadienyl complex, and a cobalt amidinate/guanidinate precursor.

7 . The method of claim 1 , wherein the substrate temperature during the multiple deposition cycles is maintained at a temperature no more than 150° C.

8 . The method of claim 1 , wherein the substrate temperature during the multiple deposition cycles is maintained at a temperature no more than 100° C.

9 . The method of claim 1 , wherein the substrate temperature during the multiple deposition cycles is maintained at a temperature no more than 90° C.

10 . The method of claim 1 , wherein the cobalt layer is deposited on a barrier layer.

11 . The method of claim 1 , wherein the co-reactant is hydrogen (H 2 ).

12 . The method of claim 1 , wherein the co-reactant is hydrogen (H 2 ) and the nitrogen-containing cobalt growth inhibitor is ammonia (NH 3 ).

13 . The method of claim 12 , wherein NH 3 is between 0.5% and 20% (volumetric) of the mixture.

14 . The method of claim 12 , wherein NH 3 is between 0.5% and 5% (volumetric) of the mixture.

15 . The method of claim 1 , wherein each cycle further comprises purging a chamber in which the substrate is housed after exposing the feature to the dose of the cobalt precursor and prior to exposing the layer of adsorbed cobalt precursor to the dose of the co-reactant.

16 . The method of claim 1 , wherein each cycle further comprises purging a chamber in which the substrate is housed after exposing the feature to the dose of a mixture of the co-reactant and the nitrogen-containing cobalt growth inhibitor.

17 . The method of claim 1 , wherein there is no purge between exposing the feature to the dose of the co-reactant and exposing the feature to the dose of the mixture of the co-reactant and the nitrogen-containing cobalt growth inhibitor.

18 . A method comprising:
(a) introducing a dose of a cobalt precursor to a process chamber; (b) after introducing the dose of the cobalt precursor, purging the process chamber; (c) after purging the process chamber, introducing a dose of a H 2 co-reactant; (d) after introducing the dose of the H 2 co-reactant, introducing a dose of a mixture of the H 2 co-reactant and a nitrogen-containing compound, wherein the nitrogen-containing compound is between 0.5% and 20% (volumetric) of the total of the H 2 co-reactant and the nitrogen-containing compound; (e) after introducing the dose of the mixture of the H 2 co-reactant and a nitrogen-containing compound, purging the process chamber; and repeating (a)-(e) one or more times.

19 . An apparatus comprising:
a process chamber; one or more gas inlets into the process chamber and associated flow-control hardware; and a controller having at least one processor and a memory, wherein the at least one processor and the memory are communicatively connected with one another, the at least one processor is at least operatively connected with the flow-control hardware, and the memory stores computer-executable instructions for: (a) introducing a dose of a cobalt precursor to the process chamber; (b) after introducing the dose of the cobalt precursor, purging the process chamber; (c) after purging the process chamber, introducing a dose of a H 2 co-reactant; (d) after introducing the dose of the H 2 co-reactant, introducing a dose of a mixture of the H 2 co-reactant and a nitrogen-containing compound, wherein the nitrogen-containing compound is between 0.5% and 20% (volumetric) of the total of the H 2 co-reactant and the nitrogen-containing compound; (e) after introducing the dose of the mixture of the H 2 co-reactant and a nitrogen-containing compound, purging the process chamber; and repeating (a)-(e) one or more times.

Assignees

• Lam Res Corp

Inventors

• Na Jeong-Seok
• Humayun Raashina

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/043

  for electroplating · CPC title

• H10W20/045

  for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD] · CPC title