Storage device

Patent metadata

Field	Value
Publication number	US-2018268902-A1
Application number	US-201815910411-A
Country	US
Kind code	A1
Filing date	Mar 2, 2018
Priority date	Mar 17, 2017
Publication date	Sep 20, 2018
Grant date	—

Abstract

A storage device includes a circuit on a substrate, electrode layers stacked on the circuit, a channel layer penetrating the electrode layers in a stacking direction, a plate-shaped first wire between the electrode layers and the circuit and electrically connected to the channel layer, a second wire at a level between the circuit and the first wire, a third wire between the circuit and the second wire, a contact plug penetrating the electrode layers and the first wire in the stacking direction and electrically connected to the second wire, and a columnar support body penetrating the electrode layers and the first wire in the stacking direction. The columnar support body has a lower end in contact with the second wire or the third wire. The first wire has a through-via-hole above the second wire, and the contact plug and the columnar support body are disposed inside the through-via-hole.

First claim

What is claimed is:

1 . A storage device, comprising:
a circuit on a substrate; a plurality of electrode layers stacked in a stacking direction above the circuit; a channel layer penetrating the electrode layers in the stacking direction; a first wire between the electrode layers and the circuit, the first wire having a planar shape and being electrically connected to the channel layer; a second wire between the circuit and the first wire; a third wire between the circuit and the second wire; a contact plug penetrating the electrode layers and the first wire in the stacking direction and electrically connected to the second wire; and a columnar support body penetrating the electrode layers and the first wire in the stacking direction and having a lower end in contact with one of the second wire or the third wire, wherein the first wire has a through-via-hole above the second wire, and the contact plug and the columnar support body are inside the through-via-hole.

2 . The storage device according to claim 1 , wherein the columnar support body comprises an insulator.

3 . The storage device according to claim 2 , further comprising:
an insulating layer between the contact plug and the electrode layers, wherein the columnar support body and the insulating layer are a same material.

4 . The storage device according to claim 1 , wherein
each electrode layer has a first through-via-hole in a portion that intersects the contact plug and a second through-via-hole in a portion that intersects the columnar support body, and a width of the first through-via-hole in a direction perpendicular to the stacking direction is wider than a width of the second through-via-hole in the same direction.

5 . The storage device according to claim 1 , wherein the third wire connects different components of the circuit.

6 . The storage device according to claim 1 , wherein the columnar support body and the contact are a same material.

7 . The storage device according to claim 1 , further comprising:
a plurality of a columnar support bodies disposed around the contact plug.

8 . The storage device according to claim 1 , wherein the lower end of the columnar support body is in contact with the second wire.

9 . The storage device according to claim 1 , wherein the lower end of the columnar support body is in contact with the third wire.

10 . A storage device, comprising:
a semiconductor substrate having a driving circuit formed thereon; a first insulating film on the semiconductor substrate covering the driving circuit; a first wire on the first insulating film; a second wire in the first insulating film between the first wire and the driving circuit in a first direction; a third wire in the first insulating film between the driving circuit and the second wire in the first direction; a stacked body over the first wire and comprising second insulating films and electrode films alternately stacked along the first direction; a channel layer penetrating the stacked body in the first direction and contacting the first wire; a contact plug penetrating the stacked body and the first wire in the stacking direction, electrically connected to the second wire and electrically insulated from the electrode layers and the first wire; and a plurality of columnar support bodies penetrating the electrode layers and the first wire in the stacking direction, wherein the contact plug is surrounded by the plurality of columnar support bodies in a region that lacks a channel layer between the contact plug and the plurality of columnar support bodies.

11 . The storage device of claim 10 , wherein the contact plug passes through a planar center of the stacked body.

12 . The storage device of claim 10 , wherein each lower end of the plurality of columnar support bodies is in contact with one of the second wire or the third wire.

13 . The storage device of claim 10 , wherein
the stacked body has a first through-via-hole in a portion that intersects the contact plug and a second through-via-hole in a portion that intersects the columnar support body, and in the stacked body, a width of the first through-via-hole in a direction perpendicular to the stacking direction is wider than a width of the second through-via-hole in the same direction.

14 . The storage device according to claim 10 , wherein the third wire connects different components of the driving circuit.

15 . The storage device according to claim 10 , wherein the columnar support body comprises an insulator.

16 . A storage device, comprising:
a semiconductor substrate having a driving circuit formed thereon; a first insulating film on the semiconductor substrate covering the driving circuit; a source line layer on the first insulating film; a first wiring level in the first insulating film between the source line layer and the driving circuit in a first direction; a stacked memory cell array on the source line layer, the stacked memory cell array comprising a plurality of electrode layers stacked in the first direction, and a plurality of insulating layers between adjacent electrode layers in the first direction, a plurality of semiconductor pillars extending through the plurality of electrode layers in the first direction and contacting the source line layer; and a contact plug penetrating the stacked memory cell array and the source line wire in the stacking direction and electrically connected to a wire on the first wiring level and electrically insulated from the source line wire and the plurality of electrode layers.

17 . The storage device according to claim 16 , further comprising:
a columnar support body penetrating the stacked memory cell array and the source line layer in the first direction.

18 . The storage device according to claim 17 , wherein the columnar support body comprises an insulator.

19 . The storage device according to claim 16 , wherein
the driving circuit is electrically connected to the contact plug via a wire on the first wiring level, and the driving circuit is below the stacked memory cell array in the first direction.

20 . The storage device according to claim 16 , further comprising:
a plurality of contact plug each disposed at a position within the stacked memory cell array.

Assignees

• Toshiba Memory Corp

Inventors

• Tanaka Hiroyasu

Classifications

• G11C19/28

  using semiconductor elements (G11C19/14, G11C19/36 take precedence) · CPC title

• G11C16/0466 Primary

  comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] (G11C16/0483, G11C16/0491 take precedence) · CPC title

• H01L27/11582

  Electricity · mapped topic

• H01L27/11565

  Electricity · mapped topic

• H10B43/40

  characterised by the peripheral circuit region · CPC title