Forming method of hard mask, forming apparatus of hard mask and recording medium

Patent metadata

Field	Value
Publication number	US-2017287713-A1
Application number	US-201715473810-A
Country	US
Kind code	A1
Filing date	Mar 30, 2017
Priority date	Mar 31, 2016
Publication date	Oct 5, 2017
Grant date	—

Abstract

A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO 2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCH x group and a NH x group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

First claim

We claim:

1 . A forming method of a hard mask, comprising:
preparing a substrate having a non-plateable material portion and a plateable material portion formed on a surface thereof; imparting a catalyst selectively to the plateable material portion by performing a catalyst imparting processing on the substrate; and forming a hard mask layer selectively on the plateable material portion by performing a plating processing on the substrate, wherein the non-plateable material portion is made of SiO 2 as a main component, and the plateable material portion is made of a material including, as a main component, a material containing at least one of a OCH x group and a NH x group, a metal material containing Si as a main component, a catalyst metal material, or a material containing carbon as a main component.

2 . The forming method of the hard mask of claim 1 ,
wherein the plateable material portion is made of a material including, as the main component, a material containing a Si—OCH x group or a Si—NH x group.

3 . The forming method of the hard mask of claim 1 ,
wherein the hard mask layer is made of a material including, as a main component, Co or a Co alloy containing B or P, or a Ni-based material.

4 . The forming method of the hard mask of claim 1 ,
wherein the catalyst contains an iron group element, a platinum metal element, Cu, Ag or Au.

5 . The forming method of the hard mask of claim 1 ,
wherein the substrate includes a base member made of the plateable material portion and a core member which is protruded on the base member and is made of the non-plateable material portion.

6 . The forming method of the hard mask of claim 1 ,
wherein the substrate includes a base member made of the non-plateable material portion and a core member which is protruded on the base member and is made of the plateable material portion.

7 . A forming apparatus of a hard mask, comprising:
a substrate holding unit configured to hold a substrate having a non-plateable material portion and a plateable material portion formed on a surface thereof; a catalyst imparting unit configured to impart a catalyst selectively to the plateable material portion by performing a catalyst imparting processing on the substrate; and a plating liquid supply unit configured to form a hard mask layer selectively on the plateable material portion by supplying a plating liquid onto the substrate, wherein the non-plateable material portion is made of SiO 2 as a main component, and the plateable material portion is made of a material including, as a main component, a material containing at least one of a OCH x group and a NH x group, a metal material containing Si as a main component, a catalyst metal material, or a material containing carbon as a main component.

8 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a forming apparatus of a hard mask to perform a forming method of a hard mask as claimed in claim 1 .

Assignees

• Tokyo Electron Ltd

Inventors

• Iwashita Mitsuaki
• Nagao Takeshi
• Mizutani Nobutaka
• Tanaka Takashi
• Yatsuda Koichi
• IWAI Kazutoshi
• Inatomi Yuichiro

Classifications

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title

• C23C14/042

  using masks · CPC title