Iridium Tip, Gas Field Ion Source, Focused Ion Beam Apparatus, Electron Source, Electron Microscope, Electron Beam Applied Analysis Apparatus, Ion-Electron Multi-Beam Apparatus, Scanning Probe Microscope, and Mask Repair Apparatus

Patent metadata

Field	Value
Publication number	US-2017148603-A1
Application number	US-201715416686-A
Country	US
Kind code	A1
Filing date	Jan 26, 2017
Priority date	Aug 9, 2013
Publication date	May 25, 2017
Grant date	—

Abstract

There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.

First claim

What is claimed is:

1 . A gas field ion source comprising:
an iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation, the iridium tip being an emitter which is configured to emit an ion beam; an ion source chamber which accommodates the emitter; a gas supply section which is configured to supply a gas to be ionized, to the ion source chamber; an extraction electrode which is configured to ionize the gas to generate ions of the gas and apply a voltage for extracting the ions of the gas from the emitter; and a temperature control section which is configured to cool the emitter.

2 . The gas field ion source according to claim 1 ,
wherein a main component of the gas is at least any one of hydrogen, nitrogen, oxygen, helium, neon, argon, krypton, and xenon, or a mixture of at least any of these gases.

3 . The gas field ion source according to claim 1 ,
wherein a main component of the gas is nitrogen.

4 . The gas field ion source according to claim 3 ,
wherein a purity of nitrogen which is the main component of the gas is 99% or more.

5 . A focused ion beam apparatus comprising:
the gas field ion source according to claim 1 ; and a control section which is configured to form a focused ion beam with the ions of the gas generated in the gas field ion source and irradiate a sample with the focused ion beam so as to perform at least one of observation, processing and analysis on an irradiated region of the sample.

6 . An ion-electron multi-beam apparatus comprising:
the gas field ion source according to claim 1 ; and a control section which is configured to irradiate substantially same position on a sample with a focused ion beam and an electron beam, wherein the focused ion beam is obtained from the gas field ion source.

7 . An ion-electron multi-beam apparatus comprising:
an electron source having:
an iridium tip as a tip which is configured to emit electrons, the iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation; and
an extraction electrode which is configured to generate the electrons and apply a voltage for extracting the electrons from the iridium tip; and
a control section which is configured to irradiate substantially same position on a sample with a focused ion beam and an electron beam, wherein the electron beam is obtained from the electron source.

8 . A scanning probe microscope comprising:
an iridium tip as a probe, the iridium tip comprising a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with <210> orientation; and a control section which is configured to measure a shape and a state at an atomic level of a surface of a sample by scanning the probe in a state where the probe is brought close to the surface of the sample.

9 . The scanning probe microscope according to claim 8 ,
wherein the scanning probe microscope is at least one of a scanning tunneling microscope and a scanning atomic force microscope.

10 . A mask repair apparatus comprising:
the gas field ion source according to claim 1 ; and a control section which is configured to form a focused ion beam with the ions of the gas generated in the gas field ion source so as to repair a defective part of a photomask by the focused ion beam.

11 . The mask repair apparatus according to claim 10 ,
wherein the focused ion beam is a nitrogen ion beam.

Assignees

• Hitachi High-Tech Science Corp

Inventors

• Kozakai Tomokazu
• Matsuda Osamu
• Sugiyama Yasuhiko
• Aita Kazuo
• Aramaki Fumio
• Yasaka Anto
• Oba Hiroshi

Classifications

• H01J37/08

  Ion sources; Ion guns · CPC title

• H01J2201/30415

  needle shaped · CPC title

• G01Q70/08

  Probe characteristics · CPC title

• H01J1/3044 Primary

  Point emitters · CPC title

• G01Q60/24

  AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes · CPC title