Pattern-forming method, resin, and composition

Patent metadata

Field	Value
Publication number	US-2017003595-A1
Application number	US-201615267923-A
Country	US
Kind code	A1
Filing date	Sep 16, 2016
Priority date	Mar 24, 2014
Publication date	Jan 5, 2017
Grant date	—

Abstract

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

First claim

1 . A pattern-forming method comprising:
forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; forming a resist pattern on an upper face side of the silicon-containing film; etching the silicon-containing film using the resist pattern as a mask; and to removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution.

2 . The pattern-forming method according to claim 1 , wherein the basic aqueous solution is a liquid comprising tetraalkylammonium hydroxide and water, or a liquid obtained by mixing ammonia, hydrogen peroxide and water.

3 . The pattern-forming method according to claim 1 , wherein the basic aqueous solution comprises none of hydrogen fluoride, a salt thereof, and a salt of a fluorine compound.

4 . The pattern-forming method according to claim 1 , wherein the removing of the resist underlayer film and the silicon-containing film is carried out at a temperature of less than 100° C.

5 . The pattern-forming method according to claim 1 , wherein the resist underlayer film is formed from a composition that comprises an aromatic ring-containing resin.

6 . The pattern-forming method according to claim 5 , wherein the aromatic ring-containing resin is a novolak resin, an acenaphthylene resin or a combination thereof.

7 . The pattern-forming method according to claim 6 , wherein the resin comprises a resin comprising a structural unit represented by formula (1):

wherein, in the formula (1),
Z 1 represents a substituted or unsubstituted alkanediyl group, a substituted or unsubstituted arenediyl group or a substituted or unsubstituted oxyalkanediyl group;
p1 represents number of Z 1 that bonds to the aromatic ring, and is an integer of 1 to 10, wherein p1 is no less than 2, a plurality of Z 1 s are identical or different;
R 1 and R 5 each independently represent a monovalent organic group having 1 to 20 carbon atoms;
m1 is an integer of 0 to 6, wherein in a case where m1 is no less than 2, a plurality of R 1 s are identical or different;
m3 is an integer of 0 to 6, wherein in a case where m3 is no less than 2, a plurality of R 5 s are identical or different;
R 2 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms;
m2 is an integer of 1 to 8, wherein in a case where m2 is no less than 2, a plurality of R 2 s are identical or different; and
n is an integer of 0 to 2,
wherein a sum of m1, m2, m3 and p1 is no greater than 10.

8 . The pattern-forming method according to claim 7 , wherein R 2 in the formula (1) represents —R 3 —COOR 4 , wherein R 3 represents a divalent organic group having 1 to 20 carbon atoms, and R 4 represents an organic group having 1 to 20 carbon atoms.

9 . The pattern-forming method according to claim 1 , wherein the resist underlayer film is formed from a composition that comprises a calixarene compound.

10 . The pattern-forming method according to claim 9 , wherein the calixarene compound is represented by formula (2):

wherein, in the formula (2),
R 6 represents a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms;
r is an integer of 4 to 12;
Y represents a hydrocarbon group having 1 to 10 carbon atoms;
k is 0 or 1;
m4 is an integer of 1 to 3;
m5 is an integer of 0 to 7, wherein a sum of m4 and m5 is no greater than 8; and
X 1 represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 30 carbon atoms or a hydrogen atom,
wherein
in a case where m4 is no less than 2, a plurality of R 6 s are identical or different,
in a case where m5 is no less than 2, a plurality of Ys are identical or different, and
in a case where r is no less than 2, a plurality of X 1 s are identical or different, a plurality of ks are identical or different, a plurality of m4s are identical or different and a plurality of m5s are identical or different.

11 . The pattern-forming method according to claim 1 , wherein the silicon-containing film is formed from a composition comprising:
a hydrolytic condensation product of a silane compound comprising a compound represented by formula (3); and an organic solvent,
R 7 a SiX 2 4-a   (3)

wherein, in the formula (3), R 7 represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, a cyano group, a cyanoalkyl group, an alkylcarbonyloxy group, an acid anhydride group, an alkenyl group, an aryl group or an aralkyl group, wherein the alkyl group is unsubstituted or substituted with a fluorine atom, and the aryl group and the aralkyl group are unsubstituted or substituted; X 2 represents a halogen atom or —OR 8 , wherein R 8 represents a monovalent organic group; and a is an integer of 0 to 3, wherein
in a case where R 7 is present in a plurality of number, a plurality of R 7 s are identical or different, and
in a case where X 2 is present in a plurality of number, a plurality of X 2 s are identical or different.

12 . A resin comprising a structural unit represented by formula (1-1):

wherein, in the formula (1-1),
Z 1 represents a substituted or unsubstituted alkanediyl group, a substituted or unsubstituted arenediyl group or a substituted or unsubstituted oxyalkanediyl group;
p1 represents number of Z 1 that bonds to the aromatic ring, and is an integer of 1 to 10, wherein in a case where p1 is no less than 2, a plurality of Z 1 s are identical or different;
R 1 and R 5 each independently represent a monovalent organic group having 1 to 20 carbon atoms;
m1 is an integer of 0 to 6, wherein in a case where m1 is no less than 2, a plurality of R 1 s are identical or different;
m3 is an integer of 0 to 6, wherein in a case where m3 is no less than 2, a plurality of R 5 s are identical or different;
m2 is an integer of 1 to 8;
R 3 represents a divalent organic group having 1 to 20 carbon atoms;
R 4 represents a tertiary alkyl group,
wherein in a case where m2 is no less than 2, a plurality of R 3 s are identical or different and a plurality of R 4 s are identical or different; and

n is an integer of 0 to 2,
wherein a sum of m1, m2, m3 and p1 is no greater than 10.

13 . A composition comprising a solvent and a resin which comprises a structural unit represented by formula (1-1):

wherein, in the formula (1-1),
Z 1 represents a substituted or unsubstituted alkanediyl group, a substituted or unsubstituted arenediyl group or a substituted or unsubstituted oxyalkanediyl group;
p1 represents number of Z 1 that bonds to the aromatic ring, and is an integer of 1 to 10, wherein in a case where p1 is no less than 2, a plurality of Z 1 s are identical or different;
R 1 and R 5 each independently represent a monovalent organic group having 1 to 20 carbon atoms;
m1 is an integer of 0 to 6, wherein in a case where m1 is no less than 2, a plurality of R 1 s are identical or diff

Assignees

• Jsr Corp

Inventors

• Aoki Shun
• Tanaka Hiromitsu
• Wakamaytsu Goji
• Takimoto Yoshio
• Ishikawa Masayoshi
• Kimura Toru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title

• G03F7/405

  Treatment with inorganic or organometallic reagents after imagewise removal · CPC title