Resist underlayer film forming composition

Patent metadata

Field	Value
Publication number	US-9244353-B2
Application number	US-201314420442-A
Country	US
Kind code	B2
Filing date	Aug 5, 2013
Priority date	Aug 10, 2012
Publication date	Jan 26, 2016
Grant date	Jan 26, 2016

Abstract

A resist underlayer film forming composition including: a polymer having any one or more repeating structural units of Formulas (1a), (1b), and (1c):

two R1s are each independently alkyl group, alkenyl group, aromatic hydrocarbon group, halogen atom, nitro group, or an amino group, two R2s are each independently hydrogen atom, alkyl group, alkenyl group, acetal group, acyl group, or glycidyl group, R3 is aromatic hydrocarbon group optionally having a substituent, R4 is hydrogen atom, phenyl group, or naphthyl group, in (1b), groups of two R3s and atoms or groups of two R4s are optionally different from each other, two “k”s are each independently 0 or 1, m is integer of 3 to 500, n, n1, and n2 are an integer of 2 to 500, p is integer of 3 to 500, X is a single bond or hetero atom, and two Qs are each independently a structural unit; and solvent.

First claim

The invention claimed is:

1. A resist underlayer film forming composition comprising:
a polymer having any one or two or more of repeating structural units of Formula (1a), Formula (1b), and Formula (1c):

in the formulae, two R 1 s are each independently a C 1-10 alkyl group, a C 2-6 alkenyl group, an aromatic hydrocarbon group, a halogen atom, a nitro group, or an amino group, two R 2 s are each independently a hydrogen atom, a C 1-10 alkyl group, a C 2-6 alkenyl group, an acetal group, an acyl group, or a glycidyl group, R 3 is an aromatic hydrocarbon group optionally having a substituent, R 4 is a hydrogen atom, a phenyl group, or a naphthyl group; in Formula (1b), groups of two R 3 s are optionally different from each other, atoms or groups of two R 4 s are optionally different from each other, two “k”s are each independently 0 or 1, m is an integer of 3 to 500, n, n 1 , and n 2 are an integer of 2 to 500, p is an integer of 3 to 500, X is a single bond or a hetero atom, and two Qs are each independently a structural unit of Formula (2):

where two R 1 s, two R 2 s, two R 3 s, two R 4 s, two “k”s, n 1 , n 2 , and X are the same as defined in Formula (1b), and two Q 1 s are each independently a structural unit of Formula (2); and
a solvent.

2. The resist underlayer film forming composition according to claim 1 , wherein
the polymer is a polymer synthesized by subjecting at least one of a biphenol compound or a bisphenol compound and at least one of an aromatic aldehyde or an aromatic ketone to a polymerization reaction in the presence of an acid catalyst.

3. The resist underlayer film forming composition according to claim 1 , wherein
the aromatic hydrocarbon group of R 3 is a phenyl group, a naphthyl group, an anthryl group, or a pyrenyl group.

4. The resist underlayer film forming composition according to claim 1 , further comprising:
at least one of a cross-linking agent, an acidic compound, a thermoacid generator, and a surfactant.

5. A production method of a semiconductor device comprising:
forming a first resist underlayer film by applying the resist underlayer film forming composition as claimed claim 1 onto a surface having a level difference, a concave part and/or a convex part and baking the composition;
forming an organopolysiloxane film as a second resist underlayer film on the first resist underlayer film;
forming a resist pattern on the second resist underlayer film;
etching the second resist underlayer film using the resist pattern as a mask;
etching the first resist underlayer film using a pattern of the etched second resist underlayer film as a mask; and
etching the surface having a level difference, a concave part and/or a convex part using a pattern of the etched first resist underlayer film as a mask.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Nishimaki Hirokazu
• Hashimoto Keisuke
• Shinjo Tetsuya
• Endo Takafumi
• Sakamoto Rikimaru

Classifications

• H10P76/2041

  Photolithographic processes · CPC title

• H10P14/68

  Organic materials, e.g. photoresists · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/642

  Chemical etching · CPC title