Manufacturing method for semiconductor structure
US-12165910-B2 · Dec 10, 2024 · US
Composition for forming resist underlayer film for EUV lithography
US9005873B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9005873-B2 |
| Application number | US-201314099278-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 6, 2013 |
| Priority date | Apr 21, 2009 |
| Publication date | Apr 14, 2015 |
| Grant date | Apr 14, 2015 |
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Abstract
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A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method for producing a semiconductor device comprising the steps of: applying a composition for forming a resist underlayer film for EUV lithography comprising a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for EUV lithography onto the resist underlayer film for EUV lithography, irradiating, with EUV through a mask, the resist underlayer film for EUV lithography and a film of the resist for EUV lithography on the resist underlayer film, developing the film of the resist for EUV lithography, and transferring an image formed in the mask onto the substrate by dry etching so as to form an integrated circuit device. 2. The method for producing a semiconductor device according to claim 1 , wherein the novolac resin containing a halogen atom includes a cross-linkable group composed of an epoxy group, a hydroxy group, or a combination of an epoxy group and a hydroxy group. 3. The method for producing a semiconductor device according to claim 1 , wherein the halogen atom is a bromine atom or an iodine atom. 4. The method for producing a semiconductor device according to claim 1 , wherein the novolac resin containing a halogen atom is a reaction product of a novolac resin or an epoxidized novolac resin and a halogenated benzoic acid. 5. The method for producing a semiconductor device according to claim 1 , wherein the novolac resin containing a halogen atom is a reaction product of a glycidyloxy novolac resin and diiodosalicylic acid. 6. The method for producing a semiconductor device according to claim 1 , wherein the composition includes the novolac resin containing a halogen atom, a cross-linking agent, a cross-linking catalyst, and a solvent. 7. The method for producing a semiconductor device according to claim 1 , wherein the composition further comprises an acid generator. 8. The method for producing a semiconductor device according to claim 1 , wherein the novolac resin containing a halogen atom is a novolac resin having a weight average molecular weight of 1,000 to 100,000.
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Classifications
characterised by their composition, e.g. multilayer masks or materials · CPC title
- H10P50/283Primary
by chemical means · CPC title
- H01L21/31116Primary
Electricity · mapped topic
Compositions of epoxy resins; Compositions of derivatives of epoxy resins · CPC title
- G03F7/091Primary
characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title
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- What does patent US9005873B2 cover?
- A method for producing a semiconductor device includes the steps of: applying a composition for forming a resist underlayer film for EUV lithography including a novolac resin containing a halogen atom onto a substrate having a film to be fabricated for forming a transferring pattern and baking the composition so as to form a resist underlayer film for EUV lithography; and applying a resist for …
- Who is the assignee on this patent?
- Nissan Chemical Ind Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/283. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 14 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).