Composition for forming a resist underlayer film, and pattern-forming method

Patent metadata

Field	Value
Publication number	US-9400429-B2
Application number	US-201514642857-A
Country	US
Kind code	B2
Filing date	Mar 10, 2015
Priority date	Sep 10, 2012
Publication date	Jul 26, 2016
Grant date	Jul 26, 2016

Abstract

A composition for forming a resist underlayer film is provided, which contains: a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms each on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group having 1 to 30 carbon atoms; and an organic solvent. The monovalent organic group preferably includes a crosslinkable group. A part of hydrogen atoms each on phenolic hydroxyl groups of the calixarene-based compound is preferably substituted. The ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is preferably no less than 30/70 and no greater than 99/1.

First claim

The invention claimed is:

1. A composition comprising:
a calixarene-based compound obtained from a calixarene by substituting at least a part of hydrogen atoms on phenolic hydroxyl groups comprised in the calixarene, with a monovalent organic group, the monovalent organic group comprising 1 to 30 carbon atoms and a crosslinkable group; and
an organic solvent,
wherein the calixarene-based compound is represented by formula (4),

wherein in the formula (4), R represents a hydrogen atom, a monovalent organic group having 1 to 30 carbon atoms, or a monovalent organic group comprising 1 to 30 carbon atoms and a crosslinkable group; n is 2 or 3; Y represents a hydrocarbon group having 1 to 10 carbon atoms; q is an integer of 0 to 7; p is an integer of 1 to 3, wherein a sum of p and q is no less than 1 and no greater than 8; k is 0 or 1; and X represents a substituted or unsubstituted hydrocarbon group having 1 to 30 carbon atoms and a valency of 2, wherein a plurality of Rs are identical or different, a plurality of Xs are identical or different, a plurality of “k” s are identical or different, a plurality of “p” s are identical or different, and a plurality of “q”s are identical or different, and wherein in a case where Y is present in a plurality of number, a plurality of Ys are identical or different,
wherein in a case where R is the monovalent organic group comprising 1 to 30 carbon atoms and the crosslinkable group, the crosslinkable group is a group comprising a polymerizable carbon-carbon triple bond; an epoxy group; an alkoxymethyl group; a formyl group; an acetyl group; a dialkylaminomethyl group; a dimethylolaminomethyl group, a group represented by formula (a), a group represented by formula (b), or a group represented by formula (c):

wherein R a and R a′ each independently represent a single bond or an alkanediyl group having 1 to 10 carbon atoms; R a″ represents a single bond, an alkanediyl group, a hydroxyalkanediyloxy group or (R″O) i ; R″ represents an alkanediyl group; “i” is an integer of 1 to 10; R b″ represents a hydrogen atom; and R b , R b′ , R c , R c′ , R c″ , R d , R d′ and R d″ each independently represent a hydrogen atom or a monovalent hydrocarbon group.

2. The composition according to claim 1 , wherein a part of hydrogen atoms on phenolic hydroxyl groups of the calixarene-based compound is substituted.

3. The composition according to claim 2 , wherein a ratio of the number of substituted phenolic hydroxyl groups to the number of unsubstituted phenolic hydroxyl groups in the calixarene-based compound is no less than 30/70 and no greater than 99/1.

4. The composition according to claim 1 , wherein a molecular weight of the calixarene-based compound is no less than 500 and no greater than 3,000.

5. The composition according to claim 1 , wherein the organic solvent comprises a polyhydric alcohol partial ether acetate solvent, a ketone solvent, a carboxylic acid ester solvent, or a mixed solvent thereof.

6. The composition according to claim 1 , further comprising a resin other than a resin corresponding to the calixarene-based compound.

7. The composition according to claim 6 , wherein the resin comprises a crosslinkable group.

8. The composition according to claim 6 , wherein the resin comprises a novolak resin, a resol resin, a styrene resin, an acenaphthylene resin, a polyarylene resin or a mixture thereof.

9. The composition according to claim 6 , wherein a weight average molecular weight of the resin is no less than 2,000 and no greater than 8,000.

10. The composition according to claim 6 , wherein a content of the resin with respect to 100 parts by mass of the calixarene-based compound is no less than 5 parts by mass and no greater than 1,000 parts by mass.

11. A pattern-forming method comprising in a following order of:
applying the composition according to claim 1 directly or indirectly on a substrate to provide a resist underlayer film;
forming a resist pattern directly or indirectly on the resist underlayer film;
forming a pattern on the substrate through dry etching of the resist underlayer film, the substrate, or both the resist underlayer film and the substrate using the resist pattern as a mask; and
removing the resist underlayer film remaining on the substrate using a basic solution,
wherein the method further comprises subjecting the resist underlayer film to heating or an acid treatment before removing the resist underlayer film.

12. The pattern-forming method according to claim 11 , wherein the substrate is stepped.

13. The pattern-forming method according to claim 11 , wherein the substrate comprises a plurality of kinds of trenches.

14. The pattern-forming method according to claim 13 , wherein the plurality of kinds of trenches differ from one another in terms of an aspect ratio.

15. The pattern-forming method according to claim 14 , wherein a ratio of a maximum value of the aspect ratio to a minimum value of the aspect ratio of the plurality of kinds of trenches is no less than 10.

16. The pattern-forming method according to claim 11 , further comprising after providing the resist underlayer film and before forming the resist pattern:
providing an intermediate layer directly or indirectly on the resist underlayer film,
wherein the intermediate layer is further dry etched in forming the substrate pattern.

Assignees

• Jsr Corp

Inventors

• Toyokawa Fumihiro
• Nakafuji Shin-Ya
• Wakamatsu Gouji

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title