Composition for forming a resist underlayer film including hydroxyl group-containing carbazole novolac resin

Patent metadata

Field	Value
Publication number	US-9263285-B2
Application number	US-201113992864-A
Country	US
Kind code	B2
Filing date	Dec 5, 2011
Priority date	Dec 9, 2010
Publication date	Feb 16, 2016
Grant date	Feb 16, 2016

Abstract

There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio:

A method for producing a semiconductor device, including the steps of: forming an underlayer film using the composition for forming a resist underlayer film on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

First claim

The invention claimed is:

1. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) such that proportion of the unit structure of formula (1) to the unit structure of formula (2) is 3 to 97:97 to 3 in molar ratio:

(in formula (1), R 1 and R 2 are each independently a hydrogen atom, a halogen atom, a nitro group, an amino group, a hydroxy group, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination of the foregoing groups optionally including an ether linkage, a ketone linkage, or an ester linkage; R 3 is a hydrogen atom, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination of the foregoing groups optionally including an ether linkage, a ketone linkage, or an ester linkage; R 4 is a hydro Yen atom, a C 6-40 aryl group or heterocyclic group optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxy group; R 5 is a C 1-10 alkyl group, a C 6-40 aryl group or a heterocyclic group optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxy group; R 4 and R 5 optionally form a ring with each other; and n1 and n2 are each an integer from 1 to 3);

(in formula (2), Ar is a C 6-20 aromatic ring group; R 6 is a hydroxy group; R 7 is a hydrogen atom, a halogen atom, a nitro group, an amino group, a C 1-10 alkyl group, a C 2-10 alkenyl group, a C 6-40 aryl group, or a combination of the foregoing groups optionally including an ether linkage, a ketone linkage or an ester linkage; R 8 is a hydrogen atom, a C 6-40 aryl group or heterocyclic group optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxy group; R 9 is a C 1-10 alkyl group, a C 6-40 aryl group or a heterocyclic group optionally substituted with a halogen atom, a nitro group, an amino group or a hydroxy group; R 8 and R 9 optionally form a ring with each other; n6 is an integer from 1 to p, and n7 is an integer p-n6, where p is the maximum number of substituents with which the aromatic ring group Ar can be substituted).

2. The composition for forming a resist underlayer film according to claim 1 , wherein in formula (1), R 1 , R 2 , R 3 , and R 5 are hydrogen atoms, and R 4 is a naphthalene ring or a pyrene ring.

3. The composition for forming a resist underlayer film according to claim 1 , wherein in formula (2), Ar is a naphthalene ring, R 7 and R 9 are hydrogen atoms, and R 8 is a naphthalene ring or pyrene ring.

4. The composition for forming a resist underlayer film according to claim 1 , further comprising a cross-linking agent.

5. The composition for forming a resist underlayer film according to claim 1 , further comprising an acid and/or an acid generator.

6. A resist underlayer film, obtained by applying the composition for forming a resist underlayer film according to claim 1 onto a semiconductor substrate, and then baking the composition.

7. A method for forming a resist pattern that is used in semiconductor production, the method comprising a step of forming an underlayer film by applying the composition for forming a resist underlayer film according to claim 1 onto a semiconductor substrate, and then baking the composition.

8. A method for producing a semiconductor device, the method comprising the steps of: forming an underlayer film using the composition for forming a resist underlayer film according to claim 1 on a semiconductor substrate; forming a resist film on the underlayer film; forming a patterned resist film by irradiation of light or electron beams and developing; etching the underlayer film according to the patterned resist film; and processing the semiconductor substrate according to the patterned underlayer film.

9. A method for producing a semiconductor device, the method comprising the steps of: forming an underlayer film using the composition for forming a resist underlayer film according to claim 1 on a semiconductor substrate; forming a hard mask on the underlayer film; further forming a resist film on the hard mask; forming a patterned resist film by irradiation of light or electron beams and developing; etching the hard mask according to the patterned resist film; etching the underlayer film according to the patterned hard mask; and processing the semiconductor substrate according to the patterned underlayer film.

10. The method according to claim 9 , wherein the hard mask is formed by vapor deposition of an inorganic material.

Assignees

• Shinjo Tetsuya
• Okuyama Hiroaki
• Hashimoto Keisuke
• Someya Yasunobu
• Karasawa Ryo
• Kato Masakazu
• Nissan Chemical Ind Ltd

Inventors

• Shinjo Tetsuya
• Okuyama Hiroaki
• Hashimoto Keisuke
• Someya Yasunobu
• Karasawa Ryo
• Kato Masakazu

Classifications

• H10P76/20

  of masks comprising organic materials · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• G03F7/094

  Multilayer resist systems, e.g. planarising layers · CPC title

• C09D139/04

  Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member · CPC title

• H01L21/3081 Primary

  Electricity · mapped topic