Semiconductor device inspection device and semiconductor device inspection method

Patent metadata

Field	Value
Publication number	US-2016334459-A1
Application number	US-201615219946-A
Country	US
Kind code	A1
Filing date	Jul 26, 2016
Priority date	Feb 1, 2013
Publication date	Nov 17, 2016
Grant date	—

Abstract

A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof.

First claim

1 - 15 . (canceled)

16 : A system for inspecting a semiconductor device serving as a device under test, the system comprising:
a light source configured to generate light to be irradiated the semiconductor device; a tester configured to apply a test signal to the semiconductor device; a light detector configured to detect the light reflected by the semiconductor device and output a detection signal; a first analyzer configured to measure first phase information; a second analyzer configured to measure second phase information; and an analysis unit electrically coupled to the first analyzer and the second analyzer and configured to determine phase information at a predetermined frequency based on the first phase information and the second phase information, wherein the detection signal is input to at least one of the first analyzer and the second analyzer.

17 : The system according to claim 16 , further comprising a reference signal generator electrically coupled to the tester and configured to generate a reference signal of the predetermined frequency and output the reference signal to one of the first analyzer and the second analyzer to which the detection signal has not been input.

18 : The system according to claim 16 , wherein the first analyzer and the second analyzer are synchronized.

19 : The system according to claim 18 , wherein at least one of a frequency and a phase of a base signal of the first analyzer and the second analyzer are correspondingly synchronized.

20 : The system according to claim 18 , wherein both of the frequency of the base signal of the first analyzer and the frequency of the base signal of the second analyzer are the predetermined frequency.

21 : The system according to claim 16 , further comprising a synchronization unit electrically coupled to the first analyzer and the second analyzer and configured to synchronize the first analyzer and the second analyzer.

22 : The system according to claim 16 , further comprising a time base signal generator electrically coupled to the first analyzer and the second analyzer and configured to generate a time base signal and input the time base signal to the first analyzer and the second analyzer.

23 : The system according to claim 16 , wherein the first analyzer and the second analyzer are comprised of an analyzer.

24 : The system according to claim 16 , wherein the predetermined frequency is a frequency n times the frequency of the test signal, and
n is a positive integer.

25 : The system according to claim 16 , further comprising:
a light scanner configured to receive the light generated by the light source and scan the light to a predetermined radiation position of the semiconductor device; and an image generating unit configured to generate a phase image at the predetermined frequency based on the radiation position to which the light is scanned by the light scanner and the phase information at the predetermined frequency determined from the analysis unit.

26 : The system according to claim 16 , wherein at least one of the first analyzer and the second analyzer measures amplitude information at the predetermined frequency.

27 : The system according to claim 26 , further comprising:
a light scanner configured to receive the light generated by the light source and scan the light to a predetermined radiation position of the semiconductor device; and an image generating unit configured to generate an amplitude image at the predetermined frequency based on the radiation position to which the light is scanned by the light scanner and the amplitude information at the predetermined frequency measured by at least one of the first analyzer and the second analyzer.

28 : The system according to claim 26 , further comprising:
a light scanner configured to receive the light generated by the light source and scan the light to a predetermined radiation position of the semiconductor device; and an image generating unit configured to generate an image related to an in-phase component and a quadrature component at the predetermined frequency based on the radiation position to which the light is scanned by the light scanner, the phase information at the predetermined frequency determined by the analysis unit, and the amplitude information at the predetermined frequency measured by at least one of the first analyzer and the second analyzer.

29 : A method for inspecting a semiconductor device serving as a device under test, the method comprising:
irradiating light to the semiconductor device; applying a test signal to the semiconductor device; detecting the light reflected by the semiconductor device and outputting a detection signal; measuring first phase information by a first analyzer; measuring second phase information by a second analyzer; and determining phase information at a predetermined frequency based on the first phase information and the second phase information, wherein the detection signal is input to at least one of the first analyzer and the second analyzer.

30 : The method according to claim 29 , further comprising generating a reference signal of the predetermined frequency and outputting the reference signal to one of the first analyzer and the second analyzer to which the detection signal has not been input.

31 : The method according to claim 29 , wherein the first analyzer and the second analyzer are synchronized.

32 : The method according to claim 31 , wherein at least one of a frequency and a phase of a base signal of the first analyzer and the second analyzer are correspondingly synchronized.

33 : The method according to claim 31 , wherein both of the frequency of the base signal of the first analyzer and the frequency of the base signal of the second analyzer are the predetermined frequency.

34 : The method according to claim 29 , further comprising generating a time base signal and inputting the time base signal to the first analyzer and the second analyzer.

35 : The method according to claim 29 , wherein first phase information and second phase information are measured with respect to a common time base signal.

36 : The method according to claim 29 , wherein the predetermined frequency is a frequency n times the frequency of the test signal, and n is a positive integer.

37 : The method according to claim 29 , further comprising:
scanning the light to a predetermined radiation position of the semiconductor device; and generating a phase image at the predetermined frequency based on the radiation position to which the light is scanned in the scanning of the light, and the phase information at the predetermined frequency determined in the determining of the phase information.

38 : The method according to claim 29 , further comprising measuring amplitude information at the predetermined frequency by at least one of the first analyzer and the second analyzer.

39 : The method according to claim 38 , further comprising:
scanning the light to the predetermined radiation position of the semiconductor device; and generating an amplitude image at the predetermined frequency based on the radiation position to which the light is scanned in the scanning of the light, and the amplitude information at the predetermined frequency measured in the measuring of the amplitude information.

40 : The method according to claim 38 , further comprising:
scanning the light to th

Assignees

• Hamamatsu Photonics Kk

Inventors

• Nakamura Tomonori
• Nishizawa Mitsunori

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R23/16

  Spectrum analysis; Fourier analysis · CPC title

• G01N2201/12

  Circuits of general importance; Signal processing · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01R31/311

  of integrated circuits {(G01R31/31728 takes precedence)} · CPC title