Semiconductor device inspection device and semiconductor device inspection method

Patent metadata

Field	Value
Publication number	US-9562944-B2
Application number	US-201414764246-A
Country	US
Kind code	B2
Filing date	Jan 30, 2014
Priority date	Feb 1, 2013
Publication date	Feb 7, 2017
Grant date	Feb 7, 2017

Abstract

A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof.

First claim

The invention claimed is:

1. A system for inspecting a semiconductor device serving as a device under test, the system comprising:
a light source configured to generate light to be irradiated the semiconductor device;
a tester configured to apply a test signal to the semiconductor device;
a light detector configured to detect the light reflected by the semiconductor device and output a detection signal;
a first spectrum analyzer, to which the detection signal is input, configured to measure first phase information serving as phase information of the detection signal;
a reference signal generating unit electrically coupled to the tester and configured to generate a reference signal of a predetermined frequency;
a second spectrum analyzer, to which the reference signal is input, configured to measure second phase information serving as phase information of the reference signal; and
an analysis unit electrically coupled to the first spectrum analyzer and the second spectrum analyzer and configured to derive phase information of the detection signal at the predetermined frequency based on the first phase information and the second phase information,
wherein the first spectrum analyzer measures the first phase information with respect to a frequency of a base signal that operates the first spectrum analyzer,
the second spectrum analyzer measures the second phase information with respect to a frequency of a base signal that operates the second spectrum analyzer, and
the frequency and the phase of the base signal of the first spectrum analyzer are synchronized with the frequency and the phase of the base signal of the second spectrum analyzer.

2. The system according to claim 1 , wherein both of the frequency of the base signal of the first spectrum analyzer and the frequency of the base signal of the second spectrum analyzer are the predetermined frequency.

3. The system according to claim 1 , further comprising a synchronization unit electrically coupled to the first spectrum analyzer and the second spectrum analyzer and configured to synchronize the frequency and the phase of the base signal of the first spectrum analyzer with the frequency and the phase of the base signal of the second spectrum analyzer.

4. The system according to claim 1 , wherein the predetermined frequency is a frequency n times the frequency of the test signal, and
n is a positive integer.

5. The system according to claim 1 , further comprising:
a light scanner configured to receive the light generated by the light source and scan the light to a predetermined radiation position of the semiconductor device; and
an image generating unit configured to generate a phase image at the predetermined frequency based on the radiation position to which the light is scanned by the light scanner and the phase information of the detection signal at the predetermined frequency derived from the analysis unit.

6. The system according to claim 1 , wherein the first spectrum analyzer measures amplitude information of the detection signal at the predetermined frequency.

7. The system according to claim 6 , further comprising:
a light scanner configured to receive the light generated by the light source and scan the light to a predetermined radiation position of the semiconductor device; and
an image generating unit configured to generate an amplitude image at the predetermined frequency based on the radiation position to which the light is scanned by the light scanner and the amplitude information of the detection signal at the predetermined frequency measured by the first spectrum analyzer.

8. The system according to claim 6 , further comprising:
a light scanner configured to receive the light generated by the light source and scan the light to a predetermined radiation position of the semiconductor device; and
an image generating unit configured to generate an image related to an in-phase component and a quadrature component at the predetermined frequency based on the radiation position to which the light is scanned by the light scanner, the phase information of the detection signal at the predetermined frequency derived by the analysis unit, and the amplitude information of the detection signal at the predetermined frequency measured by the first spectrum analyzer.

9. A method for inspecting a semiconductor device serving as a device under test, the method comprising:
irradiating light to the semiconductor device;
applying a test signal to the semiconductor device;
detecting the light reflected by the semiconductor device and outputting the detection signal;
measuring first phase information serving as phase information of the detection signal with respect to a frequency of a base signal that operates a first spectrum analyzer;
generating a reference signal of a predetermined frequency;
measuring second phase information serving as phase information of the reference signal with respect to a frequency of a base signal that operates a second spectrum analyzer; and
deriving phase information of the detection signal at the predetermined frequency based on the first phase information and the second phase information,
wherein a frequency and a phase of the base signal of the first spectrum analyzer are synchronized with a frequency and a phase of the base signal of the second spectrum analyzer.

10. The method according to claim 9 , wherein both of the frequency of the base signal of the first spectrum analyzer and the frequency of the base signal of the second spectrum analyzer are the predetermined frequency.

11. The method according to claim 9 , wherein the predetermined frequency is a frequency n times the frequency of the test signal, and
n is a positive integer.

12. The method according to claim 9 , further comprising:
scanning the light to a predetermined radiation position of the semiconductor device; and
generating a phase image at the predetermined frequency based on the radiation position to which the light is scanned in the scanning of the light, and the phase information of the detection signal at the predetermined frequency derived in the deriving of the phase information of the detection signal.

13. The method according to claim 9 , further comprising measuring amplitude information of the detection signal at the predetermined frequency by the first spectrum analyzer.

14. The method according to claim 13 , further comprising:
scanning the light to the predetermined radiation position of the semiconductor device; and
generating an amplitude image at the predetermined frequency based on the radiation position to which the light is scanned in the scanning of the light, and the amplitude information of the detection signal at the predetermined frequency measured in the measuring of the amplitude information of the detection signal.

15. The method according to claim 13 , further comprising:
scanning the light to the predetermined radiation position of the semiconductor device; and
generating an image related to an in-phase component and a quadrature component at the predetermined frequency based on the radiation position to which the light is scanned in the scanning of the light, the phase information of the detection signal at the predetermined frequency derived in the deriving of the phase information of the detection signal, and the amplitude information of the detection signal at the predetermined frequency measured in the measuring of the amplitude information of the detection signal.

16. The system according to claim 1 , wherein the frequency of the base signal of the first spectrum analyzer an

Assignees

• Hamamatsu Photonics Kk

Inventors

• Nakamura Tomonori
• Nishizawa Mitsunori

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R23/16

  Spectrum analysis; Fourier analysis · CPC title

• G01N2201/12

  Circuits of general importance; Signal processing · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01R31/311 Primary

  of integrated circuits {(G01R31/31728 takes precedence)} · CPC title