Upper heat shielding body, ingot growing apparatus having the same and ingot growing method using the same

Patent metadata

Field	Value
Publication number	US-2016208408-A1
Application number	US-201414915159-A
Country	US
Kind code	A1
Filing date	Aug 19, 2014
Priority date	Aug 27, 2013
Publication date	Jul 21, 2016
Grant date	—

Abstract

Provided is an ingot growing apparatus. The ingot growing apparatus for growing an ingot from a silicon melt received in a crucible by using a seed includes a chamber providing a space in which a series of processes for growing the ingot is performed, the crucible disposed within the chamber, a heating unit disposed outside the crucible, a seed chuck fixing the seed, an elevation unit connected to the seed chuck; and an upper heat shielding body disposed above the crucible, the upper heat shielding body having a hole through which the grown ingot passes, wherein the hole is adjustable in size.

First claim

1 . An ingot growing apparatus for growing an ingot from a silicon melt received in a crucible by using a seed, the ingot growing apparatus comprising:
a chamber providing a space in which a series of processes for growing the ingot is performed; the crucible disposed within the chamber; a heating unit disposed outside the crucible; a seed chuck fixing the seed; an elevation unit connected to the seed chuck; and an upper heat shielding body disposed above the crucible, the upper heat shielding body having a hole through which the grown ingot passes, wherein the hole is adjustable in size.

2 . The ingot growing apparatus according to claim 1 , wherein the upper heat shielding body comprises a hole size adjustment unit for adjusting a hole size of the upper heat shielding body.

3 . The ingot growing apparatus according to claim 2 , further comprising a driving unit for driving the hole size adjustment unit.

4 . The ingot growing apparatus according to claim 3 , wherein the hole size adjustment unit comprises:
a blade part constituted by a plurality of blade parts for opening or dosing a hole of the upper heat shielding body; a rotation plate disposed above the blade parts to move the blade parts; and a board disposed under the blade parts to support the blade parts.

5 . The ingot growing apparatus according to claim 4 , wherein a ring-shaped opening through which the grown ingot passes is defined in a central portion of each of the blade parts, the rotation plate, and the board.

6 . The ingot growing apparatus according to claim 4 , wherein at least portion of the blade parts is selectively disposed in the opening to adjust the hole size of the upper heat shielding body.

7 . The ingot growing apparatus according to claim 4 , wherein each of the blade parts is formed of one of high-purity quartz, graphite, and high-purity carbon composite.

8 . The ingot growing apparatus according to claim 7 , wherein a surface of each of the blade parts is coated with graphite.

9 . The ingot growing apparatus according to claim 4 , wherein a path is provided in the upper heat shielding body, a gear shaft connected to the driving unit is disposed in the path, a gear is disposed on an end of the gear shaft, and a gear groove engaged with the gear is defined in an outer circumferential surface of the rotation plate.

10 . The ingot growing apparatus according to claim 9 , wherein the driving unit rotates the gear shaft to gradually open or dose the hole of the upper heat shielding body.

11 . The ingot growing apparatus according to claim 10 , further comprising a control unit for controlling the hole size of the upper heat shielding body through the driving unit according to an ingot growing process.

12 . A upper heat shielding body disposed within an ingot growing apparatus to shield heat of a crucible receiving a silicon melt against the outside, the upper heat shielding body comprising:
an insulation unit disposed above the crucible, the insulation unit having a hole through which an ingot passes; a hole size adjustment unit mounted on the insulation unit to successively adjust a hole size of the insulation unit; and a driving unit driving the hole size adjustment unit.

13 . The upper heat shielding body according to claim 12 , wherein the hole size adjustment unit comprises:
a blade part constituted by a plurality of blade parts for opening or dosing the hole of the insulation unit; a rotation plate disposed above the blade parts to move the blade parts; and a board disposed under the blade parts to support the blade parts.

14 . An ingot growing method comprising:
receiving polycrystal silicon in a crucible; dosing a hole of an upper heat shielding body disposed above the crucible; heating the crucible to form a silicon melt; opening the hole of the upper heat shielding body by a predetermined size so that a seed passes through the hole to allow the seed to pass through the hole of the upper heat shielding body; increasing the hole size of the upper heat shielding body according to an expansion in diameter of an ingot while growing the ingot by using the seed; forming the hole of the upper heat shielding body with a size greater by a predetermined size than that of a body while performing a body growing process for forming the body by using the seed; and performing a tailing process by using the seed.

15 . The ingot growing method according to claim 14 , wherein the seed is heated at a temperature of about 1,200° C. before the seed is dipped so that thermal shock is below about 1.5 Mpa when the seed is dipped into the silicon melt.

16 . The ingot growing method according to claim 14 , wherein, when the body growing process is performed, the hole of the upper heat shielding body has a size greater by about 10 mm than a diameter of the body.

17 . The ingot growing method according to claim 14 , wherein, when the necking process is performed, the necking part has a diameter of about 5.5 mm or more.

Assignees

• Lg Siltron Inc

Inventors

• Sung Jin-Kyu
• Choi Ii-Su
• Kim Do-Yeon

Classifications

• C30B15/20 Primary

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B15/30

  Mechanisms for rotating or moving either the melt or the crystal (flotation methods C30B15/28) · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title

• C30B29/06 Primary

  Silicon · CPC title