Silicon single crystal growing device and method of growing the same

Patent metadata

Field	Value
Publication number	US-2016102419-A1
Application number	US-201414418820-A
Country	US
Kind code	A1
Filing date	Jun 5, 2014
Priority date	Jun 21, 2013
Publication date	Apr 14, 2016
Grant date	—

Abstract

An apparatus for growing a silicon single crystal according to embodiments includes a chamber including a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part for applying heat to the crucible side, the heater disposed beside the crucible; an upper heat insulation member located over the crucible; and upper heater parts located at a lower end portion of the upper heat insulation member, wherein the upper heater parts have diameters different from each other with respect to a center of the crucible, and include a plurality of ring-shaped heaters which are spaced apart from each other. Due to the individually controllable upper heater parts, a uniform thermal environment can be provided for silicon melt accommodated in a crucible, and localized solidification of the silicon melt can be prevented so that the quality of a silicon single crystal and the ingot pulling speed can be readily controlled.

First claim

What is claimed is:

1 . An apparatus for growing a single crystal, the apparatus comprising:
a chamber comprising a crucible accommodating silicon melt; a support shaft rotating and lifting the crucible while supporting the crucible; a main heater part disposed beside the crucible to apply heat to a side of the crucible; an upper heat insulation member located over the crucible; and an upper heater part located at a lower end portion of the upper heat insulation member, wherein the upper heater part comprises a plurality of ring-shaped heaters which are spaced apart from each other and have different diameters from each other with respect to a center of the crucible.

2 . The apparatus according to claim 1 , further comprising a plurality of pyrometers located over the chamber, and determining a temperature of a solid-liquid interface of a silicon single crystal.

3 . The apparatus according to claim 1 , further comprising a camera located outside the chamber, and determining a temperature of a solid-liquid interface of a silicon single crystal by capturing an image of a solid-liquid interface of the silicon single crystal.

4 . The apparatus according to claim 1 , further comprising a control unit connected to the upper heater part, wherein each heater of the upper heater part can be individually operated through a user selection according to temperature information on a solid-liquid interface, the information being transferred to the control unit.

5 . The apparatus according to claim 1 , further comprising a heater shield disposed at the upper heater part and blocking heat transfer between neighboring heaters.

6 . The apparatus according to claim 5 , wherein the heater shield comprises a side surface shield film blocking a side surface of each heater disposed in the upper heater part, and a lower surface shield film blocking a lower surface of each heater.

7 . The apparatus according to claim 6 , wherein the shield films are coated with a reflection film for blocking heat between neighboring heaters.

8 . The apparatus according to claim 5 , wherein the heater shield is made of graphite or tungsten.

9 . The apparatus according to claim 1 , further comprising a control unit connected to the upper heater part, wherein the control unit differently adjusts power for each heater disposed in the upper heater part or turns on only an arbitrary heater according to temperature information on a solid-liquid interface.

10 . The apparatus according to claim 9 , further comprising a ring-shaped lower heater disposed under a crucible support member while surrounding the support shaft, and connected to the control unit.

11 . The apparatus according to claim 10 , wherein the control unit turns on/off the lower heater according to a melting state of a silicon single crystal.

12 . The apparatus according to claim 10 , wherein the upper heater part, the main heater part, and the lower heater are each individually operable through a user selection.

13 . A method for growing a single crystal, which is a method for growing single crystal using the Czochralski method, the method comprising:
filling a crucible disposed inside a process chamber with poly silicon and melting the poly silicon through heat generated from a main heater part disposed at a side surface of the crucible and an upper heater part disposed over the poly silicon; and dipping a seed in the crucible, then performing a shoulder process, a body process, and a tail process to grow a silicon single crystal ingot, wherein the main heater part is heated and only a portion of heaters disposed in an upper heater part are simultaneously heated according to temperature information on a solid-liquid interface of the poly silicon melt, in the steps of melting the poly silicon filled in the crucible, and performing a shoulder process, a body process, and a tail process.

14 . The method according to claim 13 , comprising a step for controlling an operation of the upper heater part by transmitting information about a solid-liquid interface of molten poly silicon through a pyrometer and a camera disposed outside the process chamber.

15 . The method according to claim 13 , wherein a lower heater disposed under the crucible is heated to melt poly silicon accommodated in the crucible in the step for melting poly silicon filled in the crucible.

16 . The method according to claim 13 , wherein when performing the body process, power is increased progressively from a heater nearest to a growing silicon single crystal ingot toward a heater nearest to a side wall of the crucible from among heaters disposed in the upper heater part, and a temperature of the solid-liquid interface of silicon melt is controlled.

17 . The method according to claim 13 , wherein when performing the body process, a highest level of power is applied to one heater from a heater nearest to a growing silicon single crystal ingot, a heater nearest to a side wall of the crucible, and a heater located at a middle of the upper heater part from among heaters disposed in the upper heater part, and a temperature of the solid-liquid interface of silicon melt is controlled.

Assignees

• Lg Siltron Inc

Inventors

• Jeon Su-In

Classifications

• C30B29/06 Primary

  Silicon · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title

• C30B15/206 Primary

  the thermal history of growing the ingot · CPC title

• C30B15/26

  using television detectors; using photo or X-ray detectors · CPC title

• C30B15/20

  Controlling or regulating (controlling or regulating in general G05) · CPC title