Pvt-method and device for producing single crystals in a safe manner with regard to the process
US-2024376633-A1 · Nov 14, 2024 · US
Method for producing sic single crystal
US2016208409A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016208409-A1 |
| Application number | US-201615000871-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 19, 2016 |
| Priority date | Jan 16, 2015 |
| Publication date | Jul 21, 2016 |
| Grant date | — |
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Abstract
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A method for producing a SiC single crystal by a solution method of bringing a seed crystal into contact with a Si solution of C and pulling up a SiC single crystal, the production method of a SiC single crystal including connecting the seed crystal to a seed crystal holder, disposing a cooling mechanism on the seed crystal holder, and promoting cooling of the seed crystal holder by the cooling mechanism in accordance with an increase in the pulling amount of the SiC single crystal.
First claim
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1 . A method for producing a SiC single crystal by a solution method of bringing a seed crystal into contact with a Si solution of C and pulling up a SiC single crystal, the production method of a SiC single crystal comprising: connecting said seed crystal to a seed crystal holder, and promoting cooling of said seed crystal holder in accordance with an increase in the pulling amount of said SiC single crystal. 2 . The method according to claim 1 , wherein cooling of said seed crystal holder is promoted in accordance with an increase in the pulling length of said SiC single crystal. 3 . The method according to claim 1 , wherein cooling of said seed crystal holder is controlled by the temperature of cooling water.
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Classifications
using as solvent a component of the crystal composition · CPC title
- C30B29/36Primary
Carbides · CPC title
Controlling or regulating (controlling or regulating in general G05) · CPC title
Heating of the melt or the crystallised materials · CPC title
- C30B15/203Primary
the relationship of pull rate (v) to axial thermal gradient (G) · CPC title
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- What does patent US2016208409A1 cover?
- A method for producing a SiC single crystal by a solution method of bringing a seed crystal into contact with a Si solution of C and pulling up a SiC single crystal, the production method of a SiC single crystal including connecting the seed crystal to a seed crystal holder, disposing a cooling mechanism on the seed crystal holder, and promoting cooling of the seed crystal holder by the cooling…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Jul 21 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).