Atomic layer process chamber for 3d conformal processing

Patent metadata

Field	Value
Publication number	US-2016276162-A1
Application number	US-201615071479-A
Country	US
Kind code	A1
Filing date	Mar 16, 2016
Priority date	Mar 20, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

Embodiments described herein relate to methods for forming or treating material layers on semiconductor substrates. In one embodiment, a method for performing an atomic layer process includes delivering a species to a surface of a substrate at a first temperature, followed by spike annealing the surface of the substrate to a second temperature to cause a reaction between the species and the molecules on the surface of the substrate. The second temperature is higher than the first temperature. By repeating the delivering and spike annealing processes, a conformal layer is formed on the surface of the substrate or a conformal etching process is performed on the surface of the substrate.

First claim

1 . A method, comprising:
delivering a species to a surface of a substrate, wherein the substrate is at a first temperature, wherein the species is adsorbed on the surface of the substrate; heating the surface of the substrate to a second temperature, wherein at the second temperature the species reacts with the surface of the substrate; and repeating the delivering and the heating processes.

2 . The method of claim 1 , wherein the second temperature is greater than the first temperature, and the second temperature ranges from about 1000 degrees Celsius to about 1300 degrees Celsius.

3 . The method of claim 1 , wherein the species comprises radicals.

4 . The method of claim 1 , wherein the species comprises one or more gases.

5 . The method of claim 1 , wherein the species comprises halogen radicals or nitrogen containing radicals or gas.

6 . The method of claim 5 , wherein the species is halogen radicals and the surface of the substrate comprises silicon, and at the second temperature the halogen radicals react with silicon to form a product, wherein the produce is removed from the surface of the substrate.

7 . The method of claim 6 , wherein the repeating of the delivering and heating processes is a conformal etching process.

8 . A method, comprising:
delivering a species to a surface of a substrate, wherein the substrate is at a first temperature, wherein the species is adsorbed on the surface of the substrate; heating the surface of the substrate to a second temperature, wherein at the second temperature the species diffuses into the surface of the substrate; and repeating the delivering and the heating processes.

9 . The method of claim 8 , wherein the second temperature is greater than the first temperature, and the second temperature ranges from about 1000 degrees Celsius to about 1300 degrees Celsius.

10 . The method of claim 8 , wherein the species comprises radicals.

11 . The method of claim 10 , wherein the species comprises nitrogen containing radicals or boron containing radicals.

12 . The method of claim 11 , wherein the surface of the substrate comprises silicon dioxide or silicon.

13 . The method of claim 12 , wherein the repeating of the delivering and heating processes is a nitridation process.

14 . A method, comprising:
placing a substrate into a process chamber; delivering a species to a surface of the substrate, wherein the substrate is at a first temperature, wherein is adsorbed on the surface of the substrate; removing excess species that is not adsorbed on the surface of the substrate; heating the surface of the substrate to a second temperature, wherein the second temperature is greater than the first temperature, wherein at the second temperature the species reacts with the surface of the substrate; and repeating the delivering and the heating processes.

15 . The method of claim 14 , wherein the delivering of the species to the surface of the substrate is performed at a first processing station of the process chamber, and the heating of the surface of the substrate is performed at a second processing station of the process chamber.

16 . The method of claim 15 , wherein the process chamber includes a plurality of processing stations.

17 . The method of claim 16 , wherein the process chamber includes six processing stations, wherein three are used for delivering the species to the surface of the substrate and three are used for heating the surface of the substrate.

18 . The method of claim 17 , further comprising placing six substrates on a substrate support and placing the substrate support into the process chamber.

19 . The method of claim 18 , further comprising rotating the substrate support to place a substrate at a corresponding processing station within the process chamber.

20 . The method of claim 14 , wherein the second temperature ranges from about 1000 degrees Celsius to about 1300 degrees Celsius.

Assignees

• Applied Materials Inc

Inventors

• Liu Wei
• Mayur Abhilash J
• Stout Phillip

Classifications

• H10P72/7621

  characterised by supporting two or more semiconductor substrates · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0436

  mainly by radiation · CPC title

• H10P72/0434 Primary

  mainly by convection · CPC title

• H10P32/20

  Diffusion for doping of insulating layers · CPC title