Semiconductor device, related manufacturing method, and related electronic device

Patent metadata

Field	Value
Publication number	US-2016233138-A1
Application number	US-201615098855-A
Country	US
Kind code	A1
Filing date	Apr 14, 2016
Priority date	Jul 30, 2014
Publication date	Aug 11, 2016
Grant date	—

Abstract

A semiconductor device may include an enclosure structure. The semiconductor device may further include a getter for absorb gas molecules. The getter may be positioned (and enclosed) inside the enclosure structure and may overlap a first portion of a surface of the enclosure structure. The semiconductor device may further include an inductor. The inductor may be positioned (and enclosed) inside the enclosure structure and may overlap a second portion of the surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

First claim

What is claimed is:

1 . A semiconductor device comprising:
an enclosure structure; a getter that is positioned inside the enclosure structure, overlaps a first portion of a first surface of the enclosure structure, and is configured to absorb gas molecules; and an inductor that is positioned inside the enclosure structure and overlaps a second portion of the first surface of the enclosure structure without overlapping the getter in a direction perpendicular to the first surface of the enclosure structure.

2 . The semiconductor device of claim 1 , wherein a first side of the getter is positioned between the first surface of the enclosure structure and a second side of the getter, and wherein a surface roughness of the second side of the getter is greater than a surface roughness of the first side of the getter.

3 . The semiconductor device of claim 1 , wherein a first side of the getter is positioned between the first surface of the enclosure structure and a second side of the getter, wherein the second side of the getter has a first protrusion and a second protrusion, and wherein the first protrusion is taller than the second protrusion with respect to the first side of the getter.

4 . The semiconductor device of claim 1 , wherein a first side of the getter is positioned between the first surface of the enclosure structure and a second side of the getter, and wherein a surface roughness of the second side of the getter is greater than a surface roughness of the first surface of the enclosure structure.

5 . The semiconductor device of claim 1 , wherein a first portion of the getter extends at an angle with respect to a second portion of the getter, wherein a magnitude of the angle is greater than 0 degree and less than 180 degrees.

6 . The semiconductor device of claim 5 , wherein a surface roughness of the second portion of the getter is greater than a surface roughness of the first surface of the enclosure structure.

7 . The semiconductor device of claim 5 , wherein the first portion of the getter extends parallel to the first surface of the enclosure structure, and wherein the second portion of the getter extends parallel to a second surface of the enclosure structure.

8 . The semiconductor device of claim 5 , wherein the enclosure structure includes a first member and a second member, wherein the first member is formed of a first material, wherein the second member is formed of a second material different from the first material, and wherein the second portion of the getter directly contacts both the first member and the second member.

9 . The semiconductor device of claim 1 , wherein the enclosure structure includes a first member and a second member, wherein the first member is formed of a first material, wherein the second member is formed of a second material different from the first material, and wherein the getter directly contacts both the first member and the second member.

10 . The semiconductor device of claim 1 , wherein the enclosure structure encloses a first space and a second space connected to the first space, wherein the inductor is positioned in the first space, wherein the getter is positioned in the second space, and wherein the first space is wider than the second space in a direction parallel to the first surface of the enclosure structure.

Assignees

• Semiconductor Mfg Int Shanghai Corp

Inventors

• Zheng Chao
• Ma Junde
• Guo Liangliang
• Wang Wei

Classifications

• H10W76/12

  characterised by their shape · CPC title

• H10W20/497

  Inductive arrangements or effects of, or between, wiring layers · CPC title

• H10W76/48 Primary

  Fillings including materials for absorbing or reacting with moisture or other undesired substances · CPC title

• H10D1/20

  Inductors · CPC title

• H01L23/04

  Electricity · mapped topic