Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

Patent metadata

Field	Value
Publication number	US-9534961-B2
Application number	US-201414469184-A
Country	US
Kind code	B2
Filing date	Aug 26, 2014
Priority date	Aug 30, 2013
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor.
The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M 1−v A v ) x Al y (N 1−w O w ) z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

First claim

What is claimed is:

1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: (M 1−v A v ) x Al y (N 1−w O w ) z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70≦y/(x+y)≦0.98, 0.45≦z≦0.55, 0<w≦0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

2. The metal nitride material for a thermistor according to claim 1 , wherein the metal nitride material is deposited as a film, and is a columnar crystal extending in a vertical direction with respect to the surface of the film.

3. The metal nitride material for a thermistor according to claim 2 , wherein the metal nitride material is deposited as a film and is more strongly oriented along a c-axis than an a-axis in a vertical direction with respect to the surface of the film.

4. A film type thermistor sensor comprising:
an insulating film;
a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 2 on the insulating film; and
a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

5. A method for producing the metal nitride material for a thermistor according to claim 2 , the method comprising:
a deposition step of performing film deposition by reactive sputtering in a nitrogen- and oxygen-containing atmosphere using an M-A-Al (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, and “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”) alloy sputtering target.

6. The metal nitride material for a thermistor according to claim 1 , wherein the metal nitride material is deposited as a film and is more strongly oriented along a c-axis than an a-axis in a vertical direction with respect to the surface of the film.

7. A film type thermistor sensor comprising:
an insulating film;
a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 6 on the insulating film; and
a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

8. A method for producing the metal nitride material for a thermistor according to claim 6 , the method comprising:
a deposition step of performing film deposition by reactive sputtering in a nitrogen- and oxygen-containing atmosphere using an M-A-Al (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, and “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”) alloy sputtering target.

9. A film type thermistor sensor comprising:
an insulating film;
a thin film thermistor portion made of the metal nitride material for a thermistor according to claim 1 on the insulating film; and
a pair of pattern electrodes formed at least on the top or the bottom of the thin film thermistor portion.

10. A method for producing the metal nitride material for a thermistor according to claim 1 , the method comprising:
a deposition step of performing film deposition by reactive sputtering in a nitrogen- and oxygen-containing atmosphere using an M-A-Al (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, and “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”) alloy sputtering target.

Assignees

• Mitsubishi Materials Corp

Inventors

• Fujita Toshiaki
• Tanaka Hiroshi
• Nagatomo Noriaki

Classifications

• H01C7/006

  Thin film resistors · CPC title

• H01C7/041

  formed with two or more layers · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• H01C1/012

  the base extending along and imparting rigidity or reinforcement to the resistive element (H01C1/016 takes precedence; the resistive element being formed in two or more coils or loops as a spiral, helical or toroidal winding H01C3/18, H01C3/20; the resistive element being formed as one or more layers or coatings on a base H01C7/00) · CPC title

• H01C7/008

  Thermistors (H01C7/02 - H01C7/06 take precedence) · CPC title