Gas supply device, film forming apparatus, gas supply method, and storage medium

US2015140694A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2015140694-A1
Application numberUS-201414548654-A
CountryUS
Kind codeA1
Filing dateNov 20, 2014
Priority dateNov 20, 2013
Publication dateMay 21, 2015
Grant date

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A gas supply device for intermittently supplying raw material gas into a film forming process unit that includes a raw material container for accommodating a raw material, a carrier gas supply unit for supplying carrier gas to evaporate the raw material, a raw material gas supply path for supplying the raw material gas and the carrier gas into the film forming process unit, a flow rate detector, a flow rate regulating valve, a raw material supply and block unit for supplying and blocking the raw material gas into the film forming process unit, and a control unit for outputting a control signal for intermittently supplying the raw material gas into the film forming process unit.

First claim

Opening claim text (preview).

What is claimed is: 1 . A gas supply device for intermittently supplying raw material gas into a film forming process unit for subjecting a substrate to a film forming process, comprising: a raw material container configured to accommodate a solid or liquid raw material; a carrier gas supply unit configured to supply carrier gas to evaporate or sublime the raw material in the raw material container; a raw material gas supply path configured to supply the raw material gas including the evaporated or sublimed raw material and the carrier gas into the film forming process unit; a flow rate detector for the raw material gas and a flow rate regulating valve for the raw material gas, which are installed in the raw material gas supply path; a raw material supply and block unit configured to supply and block the raw material gas into the film forming process unit; and a control unit configured to output a control signal to cause a first process and a second process to be performed when the substrate is loaded into the film forming process unit, the first process including determining a flow rate of the raw material in the raw material gas based on a flow rate of the carrier gas supplied from the carrier gas supply unit and a flow rate of the raw material gas detected by the flow rate detector and obtaining a degree of opening the flow rate regulating valve with which the flow rate of the raw material is set to be a pre-set value, and the second process including supplying and blocking the raw material gas by using the raw material supply and block unit in order to intermittently supply the raw material gas into the film forming process unit with the degree of opening the flow rate regulating valve being fixed at the obtained degree of opening. 2 . The gas supply device of claim 1 , wherein a mass flow controller for the carrier gas, which sets a flow rate of the carrier gas to a pre-set value, is installed in a carrier gas supply path between the carrier gas supply unit and the raw material container, and the flow rate of the carrier gas used in the first process is set to be the pre-set value of the mass flow controller. 3 . The gas supply device of claim 1 , wherein the flow rate detector for the raw material gas and the flow rate regulating valve for the raw material gas are constituted with a mass flow controller for the raw material gas. 4 . A film forming apparatus comprising: the gas supply device of claim 1 ; and the film forming process unit. 5 . The film forming apparatus of claim 4 , further comprising a gas supply unit configured to supply process gas, which is different from the raw material gas, into the film forming process unit, alternately with the raw material gas. 6 . A gas supply method of intermittently supplying raw material gas into a film forming process unit for subjecting a substrate to a film forming process, comprising: vaporizing a raw material accommodated in a raw material container by supplying carrier gas into the raw material container; supplying the raw material gas including the vaporized raw material and the carrier gas from the raw material container onto the substrate via a raw material gas supply path; detecting a flow rate of the raw material gas by using a flow rate detector which is installed in the raw material gas supply path; obtaining a flow rate of the raw material in the raw material gas based on a flow rate of the carrier gas supplied into the raw material container and a flow rate of the raw material gas detected by the flow rate detector; regulating the flow rate of the raw material gas flowing through the raw material gas supply path by regulating a degree of opening a flow rate regulating valve installed in the raw material gas supply path; obtaining the degree of opening the flow rate regulating valve with which the flow rate of the raw material is set to a pre-set value; and supplying and blocking the raw material gas into the film forming process unit in order to intermittently supply the raw material gas into the film forming process unit with the degree of opening the flow rate regulating valve being fixed at the obtained degree of opening, wherein vaporizing the raw material, supplying the raw material gas, detecting the flow rate of the raw material gas, obtaining the flow rate of the raw material in the raw material gas, regulating the flow rate of the raw material gas, obtaining the degree of opening the flow rate regulating valve, and supplying and blocking the raw material gas are performed when the substrate is loaded into the film forming process unit. 7 . The gas supply method of claim 6 , further comprising supplying process gas, which is different from the raw material gas, into the film forming process unit, alternately with the raw material gas. 8 . A non-transitory computer-readable storage medium storing a computer program used for a gas supply device configured to supply raw material gas into a film forming process unit for subjecting a substrate to a film forming process, wherein the program is organized with instructions for performing the gas supply method of claim 6 .

Assignees

Inventors

Classifications

  • C23C16/52Primary

    Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

  • Electricity · mapped topic

  • Electricity · mapped topic

  • by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

  • Electricity · mapped topic

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What does patent US2015140694A1 cover?
A gas supply device for intermittently supplying raw material gas into a film forming process unit that includes a raw material container for accommodating a raw material, a carrier gas supply unit for supplying carrier gas to evaporate the raw material, a raw material gas supply path for supplying the raw material gas and the carrier gas into the film forming process unit, a flow rate detector…
Who is the assignee on this patent?
Tokyo Electron Ltd
What technology area does this patent fall under?
Primary CPC classification C23C16/52. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Thu May 21 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).