Structure and metallization process for advanced technology nodes
US-8957519-B2 · Feb 17, 2015 · US
Methods for forming layers on semiconductor substrates
US9217201B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9217201-B2 |
| Application number | US-201414204819-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 11, 2014 |
| Priority date | Mar 15, 2013 |
| Publication date | Dec 22, 2015 |
| Grant date | Dec 22, 2015 |
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Abstract
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Methods of forming a layer on a substrate may include providing a substrate to a process chamber, the process chamber having a gas port, an exhaust, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across the substrate; providing a plasma such that a flow of the plasma interacts with a flow of the process gas at an angle that is non-perpendicular; and rotating the substrate while providing the process gas and the plasma, wherein a thickness profile of the layer is controlled by adjusting at least one of a flow velocity of the process gas, a flow velocity of the plasma, the angle the flow of the plasma interacts with the flow of the process gas, or a direction of rotation of the substrate.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of forming a layer on a substrate, comprising: providing a substrate to a substrate support in a process chamber, the process chamber having a gas port disposed on a first side of the substrate support, an exhaust disposed on a second side of the substrate support opposite the first side, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas f…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
- C23C16/52Primary
Chemistry & Metallurgy · mapped topic
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Frequently asked questions
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- What does patent US9217201B2 cover?
- Methods of forming a layer on a substrate may include providing a substrate to a process chamber, the process chamber having a gas port, an exhaust, and a plasma port disposed between the gas port and the exhaust; providing a process gas from the gas port in a first direction such that the process gas flows across the substrate; providing a plasma such that a flow of the plasma interacts with a…
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification C23C16/52. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).