Semiconductor device including conductive structure and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-12598984-B2
Application number	US-202217893770-A
Country	US
Kind code	B2
Filing date	Aug 23, 2022
Priority date	Dec 2, 2021
Publication date	Apr 7, 2026
Grant date	Apr 7, 2026

Abstract

A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.

First claim

What is claimed is:

1 . A semiconductor device comprising:
an insulating structure; and a conductive structure in the insulating structure, wherein the conductive structure comprises, a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer, wherein the capping layer and the liner comprise Co, and wherein the anti-migration layer comprises Mn; wherein an upper portion of the anti-migration layer is between the capping layer and the liner.

2 . The semiconductor device according to claim 1 , wherein a thickness of the liner is smaller than a thickness of the capping layer.

3 . The semiconductor device according to claim 1 , wherein the anti-migration layer comprises an upper portion covering a top surface of the liner and a top surface of the conductive layer, and a lower portion covering an outer sidewall and a bottom surface of the liner.

4 . The semiconductor device according to claim 1 , wherein:
the barrier layer comprises a first barrier portion and a second barrier portion on the first barrier portion; the first barrier portion comprises TaN; and the second barrier portion comprises Ta.

5 . The semiconductor device according to claim 1 , wherein the liner comprises an upper portion covering a top surface of the conductive layer, and a lower portion covering an outer sidewall and a bottom surface of the conductive layer.

6 . The semiconductor device according to claim 1 , wherein:
the conductive layer comprises a first conductive portion, and a second conductive portion in the first conductive portion; the first conductive portion comprises a CuMn alloy; and the second conductive portion comprises Cu.

7 . A semiconductor device comprising:
an insulating structure; and a conductive structure in the insulating structure, wherein the conductive structure comprises,
a conductive layer,
a liner covering an outer sidewall of the conductive layer,
an anti-migration layer covering an outer sidewall of the liner,
a barrier layer covering an outer sidewall of the anti-migration layer, and
a capping layer covering a top surface of the anti-migration layer and a top surface of the barrier layer,
wherein an upper portion of the anti-migration layer comprises a bottom surface contacting a top surface of the liner.

8 . The semiconductor device according to claim 7 , wherein:
the liner and the capping layer comprise Co doped with an impurity; and the impurity is at least one of N, P, W, or B.

9 . The semiconductor device according to claim 7 , wherein the bottom surface of the upper portion of the anti-migration layer contacts a top surface of the conductive layer.

10 . The semiconductor device according to claim 7 , wherein:
a maximum width in a horizontal direction of the capping layer is substantially equal to a distance in the horizontal direction between an uppermost portion of a first outer sidewall of the barrier layer and an uppermost portion of a second outer sidewall of the barrier layer; and the first outer sidewall and the second outer sidewall of the barrier layer oppose each other.

11 . The semiconductor device according to claim 7 , wherein an upper portion of the liner comprises a top surface contacting the bottom surface of the upper portion of the anti-migration layer, and a bottom surface contacting a top surface of the conductive layer.

12 . The semiconductor device according to claim 7 , wherein:
the capping layer and the liner comprise a same conductive material; and the capping layer and the liner are spaced apart from each other with the upper portion of the anti-migration layer therebetween.

13 . The semiconductor device according to claim 7 , wherein the barrier layer comprises TaN.

14 . A semiconductor device comprising:
an insulating structure; and a conductive structure in the insulating structure, wherein the conductive structure comprises,
a barrier layer,
an anti-migration layer on the barrier layer,
a liner on the anti-migration layer,
a conductive layer on the liner, and
a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer,
wherein a first sidewall of the capping layer is connected to a first outer sidewall of the barrier layer, wherein a second side wall of the capping layer is connected to a second outer sidewall of the barrier layer, wherein the liner is spaced apart from the capping layer, and wherein the liner and the capping layer comprise Co.

15 . The semiconductor device according to claim 14 , wherein the first and second sidewalls of the capping layer are curved.

16 . The semiconductor device according to claim 14 , wherein:
the first sidewall of the capping layer contacts an uppermost portion of the first outer sidewall of the barrier layer; and the second sidewall of the capping layer contacts an uppermost portion of the second outer sidewall of the barrier layer.

17 . The semiconductor device according to claim 14 , wherein an upper portion of the anti-migration layer is between the capping layer and the liner.

18 . The semiconductor device according to claim 14 , wherein, in a cross-sectional view, the anti-migration layer surrounds the conductive layer and the liner.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Hwang Jungha
• Lim Dongchan
• Bae Seulgi

Classifications

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/037

  the barrier, adhesion or liner layers being on top of a main fill metal · CPC title

• H10W20/039

  also covering sidewalls of the conductive structures · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10W20/0372

  comprising multiple barrier, adhesion or liner layers · CPC title