Method of forming conductive member and method of forming channel

Patent metadata

Field	Value
Publication number	US-12598926-B2
Application number	US-202217932800-A
Country	US
Kind code	B2
Filing date	Sep 16, 2022
Priority date	Sep 22, 2021
Publication date	Apr 7, 2026
Grant date	Apr 7, 2026

Abstract

A method of forming conductive member includes: forming, on substrate, first portion containing first element constituting the conductive member to be obtained and second element causing eutectic reaction with the first element, and second portion containing third element constituting intermetallic compound with the second element; crystallizing primary crystals of the first element by adjusting temperature of the substrate after bringing the first portion into liquid phase state; growing crystal grains of the first element by diffusing the second element from the first portion into the second portion to increase ratio of the first element in crystal state to the first and second elements in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after completing diffusion of the second element into the second portion, into the conductive member having crystal grains of the first element.

First claim

What is claimed is:

1 . A method of forming a conductive member, the method comprising:
forming, on a substrate, a first portion by laminating a conductive layer containing a first element and a metal layer containing a second element, which causes an eutectic reaction with the first element, and forming a second portion on the metal layer to form an intermetallic compound, the second portion being constituted by an intermetallic compound formation layer containing a third element that reacts with the second element, which is diffused into the second portion; precipitating primary crystals of the first element by adjusting a temperature of the substrate after bringing the first portion into a liquid phase state; growing crystal grains of the first element from the precipitated primary crystals by diffusing the second element from the first portion into the second portion, through a chemical potential gradient of the second element between the first portion and the second portion, to increase a ratio of the first element in a crystal state to the first element and the second element in the liquid phase state in the first portion while maintaining the temperature of the substrate at the same temperature; and turning the first portion, after the diffusion of the second element into the second portion is completed, into the conductive member having the crystal grains of the first element.

2 . The method of claim 1 , wherein the first element is a semiconductor material.

3 . The method of claim 2 , wherein the first element is silicon.

4 . The method of claim 3 , wherein the second element is aluminum, and the third element is titanium.

5 . The method of claim 2 , wherein the first element is germanium.

6 . The method of claim 1 , wherein a fourth element, which has a lower melting point than the first element and forms a complete solid solution with respect to the first element, is added to the first portion, and the fourth element is added to the first element in the conductive member.

7 . The method of claim 6 , wherein the first element and the fourth element are semiconductor materials.

8 . The method of claim 7 , wherein the first element is silicon, and the fourth element is germanium.

9 . The method of claim 1 , wherein a barrier layer serving as a barrier for the second element is provided between the first portion and the second portion, and the barrier layer suppresses and controls the diffusion of the second element into the second portion.

10 . The method of claim 9 , wherein the barrier layer is titanium nitride.

11 . The method of claim 1 , further comprising:
removing a portion existing above the conductive member after turning the first portion into the conductive member.

12 . The method of claim 11 , wherein, after removing the portion existing above the conductive member, an amorphous conductive layer containing the first element is formed on the conductive member, and crystal grains of the conductive member are transferred to the amorphous conductive layer by solid-phase epitaxial growth such that the conductive member becomes thicker.

13 . The method of claim 1 , wherein a diffusion suppression layer that suppresses diffusion of the first element into the second portion is provided between the first portion and the second portion.

14 . The method of claim 13 , wherein the diffusion suppression layer contains the first element.

Assignees

• Tokyo Electron Ltd

Inventors

• Akiyama Koji
• Tamura Chihiro
• Warashina Hisashi

Classifications

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/3211

  Silicon, silicon germanium or germanium · CPC title

• H10P14/36

  characterised by treatments done before the formation of the materials · CPC title

• H10P14/20

  of semiconductor materials · CPC title