Process for contact doping

Patent metadata

Field	Value
Publication number	US-9362122-B2
Application number	US-201214004797-A
Country	US
Kind code	B2
Filing date	Apr 5, 2012
Priority date	Apr 7, 2011
Publication date	Jun 7, 2016
Grant date	Jun 7, 2016

Abstract

Provided is a process for modifying the chemical composition of a surface region of a material, employing rapid thermal processing (RTP) conditions.

First claim

The invention claimed is:

1. A process for modifying surface composition of at least one nanowire surface region of a nanowire with at least one type of foreign atoms, the process comprising:
obtaining a substrate with a layer of molecular entities comprising foreign atom(s) and/or ions of a first type to be implanted in a nanowire surface;
layering nanowires on a surface region of said substrate covered with said layer,
coating said nanowires or a surface region of a second material with a layer of molecular entities comprising foreign atom(s) and/or ions of a second type; and
bringing into contact said nanowires on the substrate covered with said layer, with the surface region of the second material, under rapid thermal processing (RTP) conditions, to permit doping of the nanowire surface regions with said foreign atoms and/or ions of a first and second type.

2. The process according to claim 1 , wherein the nanowire surface regions comprises two or more such regions on a same surface or opposite surfaces of the nanowires.

3. The process according to claim 1 , wherein the nanowires and/or second material is layered, coated on, or patterned on an inert substrate.

4. The process according to claim 3 , wherein the substrate includes a circuit or device structural elements.

5. The process according to claim 4 , wherein the device elements are selected from electrical contacts, wires, conductive paths, conducting elements, optical and/or opto-electrical elements, and other three-dimensional elements.

6. The process according to claim 1 , wherein the molecular entities are ligand molecules selected from organic-inorganic hybrid molecules.

7. The process according to claim 6 , wherein the molecular entities are in the form of inorganic or organic salts comprising one or more of the foreign atoms in a charged or neutral state.

8. The process according to claim 6 , wherein the molecular entities are selected from 2,4,6-trimethylphenylboronic acid (TMPBA), naphthalene-1-boronic acid (NBA1), 2-naphthylboronic acid (NBA2), phenylboronic acid (PBA), dimethylmethylphosphonate (DMMP), tetraethyl methylenediphosphonate (TEMDP), diethyl (2-oxopropyl)phosphonate (DEOPP), tri(4-morpholino)phosphine oxide (TMPO), triphenylphosphine oxide (TPPO), tricyclohexylphosphine oxide (TCHPO), and diphenylphosphine oxide (DPPO).

9. The process according to claim 1 , wherein the foreign atoms to be implanted in the material surface region are selected to alter one or more of material electronic properties, increase the concentration of the foreign atom in the material surface, alter one or more of the material's rheological properties, alter one or more of the material's tribological properties, endow the material with a physical or chemical property not previously associated with the material, and modify a physical or chemical property of the material.

10. The process according to claim 1 , wherein the foreign atoms are selected from p-type dopants and n-type dopants.

11. The process according to claim 1 , wherein the foreign atoms (or ions) are one or more of Li, Mg, Na, K, Rb, Cs, Be, Ca, Sr, Ba, Sc, Ti, V, Cr, Fe, Ni, Cu, Zn, Y, La, Zr, Nb, Tc, Ru, Mo, Rh, W, Au, Pt, Pd, Ag, Co, Cd, Hf, Ta, Re, Os, Ir, Hg, B, Al, Ga, In, TI, C, Si, Ge, Sn, Pb, P, As, Sb, Bi, O, S, Se, Te, Po, F, Cl, Br, I, At, and any combination thereof.

12. The process according to claim 11 , wherein the foreign atom is selected from B and P and the molecular entity is selected from 2,4,6-trimethylphenyl boronic acid (TMPBA), naphthalene-1-boronic acid (NBA1), 2-naphthylboronic acid (NBA2), phenylboronic acid (PBA), dimethylmethylphosphonate (DMMP), tetraethyl methylenediphosphonate (TEMDP), diethyl (2-oxopropyl)phosphonate (DEOPP), tri(4-morpholino)phosphine oxide (TMPO), triphenylphosphine oxide (TPPO), tricyclohexyl phosphine oxide (TCHPO), and diphenylphosphine oxide (DPPO).

13. The process according to claim 1 , wherein rapid thermal processing (RTP) conditions include one or more of temperature and pressure.

14. The process according to claim 13 , wherein RTP conditions are applied for a time period of from less than one second to several minutes.

15. The process according to claim 13 , wherein said temperature being within the range of 50° C. to 1,200° C., the conditions optionally include application of vacuum.

16. The process according to claim 1 , for ultra-shallow doping of said atoms (ions) to a surface depth extending from the most exposed region of the material external surface to a depth of about 1,000 nm.

17. The process according to claim 16 , wherein doping being to a surface depth of between about 1 to about 1,000 nm, from the exposed material surface.

18. The process according to claim 17 , wherein the depth is between about 1 to about 30 nm from the exposed material surface.

Assignees

• Yerushalmi Roie
• Pinchas-Hazut Ori
• Yissum Res Dev Co

Inventors

• Yerushalmi Roie
• Pinchas-Hazut Ori

Classifications

• H10P32/1408

  from or through or into an external applied layer, e.g. photoresist or nitride layers · CPC title

• H10P32/171

  being group IV material · CPC title

• H10P32/19 Primary

  Diffusion sources · CPC title

• H10P32/16

  between a solid phase and a liquid phase · CPC title

• H10P32/14 Primary

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title