Laser-assisted method for parting crystalline material

Patent metadata

Field	Value
Publication number	US-12594622-B2
Application number	US-202418411914-A
Country	US
Kind code	B2
Filing date	Jan 12, 2024
Priority date	Dec 29, 2018
Publication date	Apr 7, 2026
Grant date	Apr 7, 2026

Abstract

A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One potential action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another potential action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

First claim

What is claimed is:

1 . A crystalline material processing method, comprising:
forming a subsurface laser damage region in a crystalline material substrate along a first average depth position below a surface of the crystalline material substrate; generating an image of the surface of the crystalline material substrate; analyzing the image of the surface of the crystalline material substrate to identify a condition indicative of one or more uncracked regions below the surface of the crystalline material substrate; determining whether a property of the one or more uncracked regions exceeds a first threshold; and adjusting one or more laser parameters for forming the subsurface laser damage region at a second average depth position below the surface of the crystalline material substrate.

2 . The crystalline material processing method of claim 1 , wherein the method further comprises:
determining whether a property of the one or more uncracked regions exceeds a second threshold; and forming an additional subsurface laser damage region in the crystalline material substrate along the first average depth position below the surface of the crystalline material substrate.

3 . The crystalline material processing method of claim 1 , wherein the method further comprises fracturing the crystalline material substrate along the first average depth position.

4 . The crystalline material processing method of claim 1 , wherein the property of the one or more uncracked regions comprises an area of each of the one or more uncracked regions.

5 . The crystalline material processing method of claim 1 , wherein the property of the one or more uncracked regions comprises a maximum length dimension of each of the one or more uncracked regions.

6 . The crystalline material processing method of claim 1 , wherein the property of the one or more uncracked regions comprises a maximum width dimension of each of the one or more uncracked regions.

7 . The crystalline material processing method of claim 1 , wherein the property of the one or more uncracked regions comprises an aggregate area of the one or more uncracked regions.

8 . The crystalline material processing method of claim 1 , wherein the one or more laser parameters comprise one or more of laser power, focus depth, number of laser passes, laser pass spacing, or laser pulse width.

9 . The crystalline material processing method of claim 1 , wherein adjusting one or more laser parameters comprises incrementally increasing average laser power.

10 . The crystalline material processing method of claim 1 , wherein generating an image of the surface of the crystalline material substrate comprises:
illuminating the surface with a diffuse light source arranged to a first lateral side of the crystalline material substrate; and capturing the image with an image capture device arranged to a second lateral side of the crystalline material substrate, the second lateral side opposing the first lateral side.

11 . The crystalline material processing method of claim 10 , wherein the first lateral side is within 5 degrees of perpendicular to a <11 2 0> direction of the crystalline material substrate.

12 . The crystalline material processing method of claim 1 , wherein the crystalline material substrate comprises silicon carbide.

13 . A crystalline material processing method, comprising:
forming with a laser a subsurface laser damage region in a crystalline material along a first average depth position below a surface of the crystalline material to effectuate separation of a portion of the crystalline material from a remaining crystalline material; generating an image of the crystalline material; analyzing the image to identify a condition indicative of one or more uncracked regions below the surface of the crystalline material; adjusting one or more laser parameters of the laser based on analyzing the image; and applying the laser with adjusted parameters to at least one of 1) uncracked regions of the crystalline material to effectuate separation of a portion of the crystalline material from the remaining crystalline material or 2) to the remaining crystalline material to form a second subsurface damage region below a surface of the remaining crystalline material.

14 . The crystalline material processing method of claim 13 , wherein the one or more laser parameters comprise one or more of laser power, focus depth, number of laser passes, laser pass spacing, or laser pulse width.

15 . The crystalline material processing method of claim 13 , wherein generating an image of the surface of the crystalline material comprises:
illuminating the crystalline material with a diffuse light source arranged to a first lateral side of the crystalline material; capturing the image with an image capture device arranged to a second lateral side of the crystalline material, the second lateral side opposing the first lateral side.

16 . The crystalline material processing method of claim 15 , wherein the first lateral side is within 5 degrees of perpendicular to a <11 2 0> direction of the crystalline material.

17 . The crystalline material processing method of claim 13 , wherein the crystalline material comprises silicon carbide.

18 . The crystalline material processing method of claim 13 , wherein the method further comprises fracturing the crystalline material along the first average depth position.

Assignees

• Wolfspeed Inc

Inventors

• Donofrio Matthew
• Edmond John
• Golakia Harshad
• Mayer Eric

Classifications

• H10P14/3816

  Pulsed laser beam · CPC title

• B23K26/40

  taking account of the properties of the material involved · CPC title

• B23K26/53 Primary

  for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks · CPC title

• B28D5/0064 Primary

  Devices for the automatic drive or the program control of the machines · CPC title

• B23K26/0622

  by shaping pulses · CPC title