Pvt-method and device for producing single crystals in a safe manner with regard to the process
US-2024376633-A1 · Nov 14, 2024 · US
One hundred millimeter SiC crystal grown on off-axis seed
US8980445B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8980445-B2 |
| Application number | US-42895406-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2006 |
| Priority date | Jul 6, 2006 |
| Publication date | Mar 17, 2015 |
| Grant date | Mar 17, 2015 |
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Abstract
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A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.
First claim
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The invention claimed is: 1. An off-axis single crystal silicon carbide wafer made by a method of: cutting a seed crystal of silicon carbide from a bulk single crystal of silicon carbide at an angle with respect to the c-axis of the bulk crystal to produce a seed crystal with a seed face that is off-axis with respect to the c-face of the bulk crystal; applying a thermal gradient to the seed crystal in a seeded growth system in a direction that is perpendicular to the seed face o…
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- What does patent US8980445B2 cover?
- A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the …
- Who is the assignee on this patent?
- Leonard Robert T, Brady Mark, Powell Adrian, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).