Thermistor sintered body and method for manufacturing thermistor sintered body

US12555707B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-12555707-B2
Application numberUS-202118560607-A
CountryUS
Kind codeB2
Filing dateNov 11, 2021
Priority dateNov 11, 2021
Publication dateFeb 17, 2026
Grant dateFeb 17, 2026

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A thermistor sintered body has a thickness in a range of 1 μm to 100 μm and an area in a range of 1 mm 2 to 10 mm 2 , and is composed of a single body of a sintered body having a composition of NiMn 2 O 4 . This thermistor sintered body can be manufactured by a first step of dropping a raw material liquid RL onto a surface of a substrate rotatably supported, a second step of rotating the substrate with the dropped raw material liquid RL and spreading the raw material liquid RL, a third step of forming a sintered body having the composition of NiMn 2 O 4 on the surface of the substrate by heating and holding the raw material liquid RL and the substrate on which the raw material liquid RL has been placed, and a fourth step of separating the sintered body from the substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1 . A thermistor sintered body, wherein the thermistor sintered body has a thickness in a range of 1 μm to 100 μm and an area in a range of 1 mm 2 to 10 mm 2 , and the thermistor sintered body is composed of a single body of a sintered body having a composition of NiMn 2 O 4 , wherein in the thermistor sintered body, 40% to 80% of Mn in the NiMn 2 O 4 is substituted with Fe, and the thermistor sintered body has a relative density of 90% or more. 2 . The thermistor sintered body according to claim 1 , wherein: the thickness is in a range of 10 μm to 50 μm; and the area is in a range of 2 mm 2 to 5 mm 2 . 3 . A manufacturing method of a thermistor sintered body according to claim 1 , the manufacturing method comprising: a first step of dropping a raw material liquid onto a surface of a rotatably supported substrate; a second step of rotating the substrate with the dropped raw material liquid and spreading the raw material liquid; a third step of forming the sintered body having the composition of NiMn 2 O 4 on the surface of the substrate by heating and holding the raw material liquid and the substrate on which the raw material liquid has been placed; and a fourth step of separating the sintered body from the substrate. 4 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein the third step is performed after repeating the first step and the second step a plurality of times. 5 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein in the fourth step, the sintered body is separated from the substrate based on a difference in linear expansion coefficient between the sintered body and the substrate. 6 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein in the fourth step, the sintered body is separated from the substrate by selectively dissolving the substrate. 7 . The manufacturing method of the thermistor sintered body according to claim 3 , wherein a thermistor joined body, in which the sintered body is formed on the surface of the substrate, is cut and divided in a grid pattern when viewed from above in order to generate a plurality of thermistor divided bodies; and wherein the sintered body is separated from the substrate by selectively dissolving a boundary portion in each of the plurality of generated thermistor divided bodies, the boundary portion being located between the sintered body and the substrate. 8 . The manufacturing method of the thermistor sintered body according to claim 5 , wherein a trace of a material forming the substrate remains on a separation surface, which is a surface of the sintered body from which the substrate is separated. 9 . The manufacturing method of the thermistor sintered body according to claim 3 further comprising: recovering the sintered body separated from the substrate by magnetic force. 10 . The thermistor sintered body according to claim 2 , wherein 20% to 90% of Mn in the NiMn 2 O 4 is substituted with Fe. 11 . A manufacturing method of a thermistor sintered body according to claim 2 , the manufacturing method comprising: a first step of dropping a raw material liquid onto a surface of a rotatably supported substrate; a second step of rotating the substrate with the dropped raw material liquid and spreading the raw material liquid; a third step of forming the sintered body having the composition of NiMn 2 O 4 on the surface of the substrate by heating and holding the raw material liquid and the substrate on which the raw material liquid has been placed; and a fourth step of separating the sintered body from the substrate. 12 . The manufacturing method of the thermistor sintered body according to claim 4 , wherein in the fourth step, the sintered body is separated from the substrate based on a difference in linear expansion coefficient between the sintered body and the substrate. 13 . The manufacturing method of the thermistor sintered body according to claim 4 , wherein in the fourth step, the sintered body is separated from the substrate by selectively dissolving the substrate. 14 . The manufacturing method of the thermistor sintered body according to claim 4 , wherein a thermistor joined body, in which the sintered body is formed on the surface of the substrate, is cut and divided in a grid pattern when viewed from above in order to generate a plurality of thermistor divided bodies; and wherein the sintered body is separated from the substrate by selectively dissolving a boundary portion in each of the plurality of generated thermistor divided bodies, the boundary portion being located between the sintered body and the substrate. 15 . The manufacturing method of the thermistor sintered body according to claim 6 , wherein a trace of a material forming the substrate remains on a separation surface, which is a surface of the sintered body from which the substrate is separated. 16 . The manufacturing method of the thermistor sintered body according to claim 7 , wherein a trace of a material forming the substrate remains on a separation surface, which is a surface of the sintered body from which the substrate is separated. 17 . The manufacturing method of the thermistor sintered body according to claim 5 further comprising recovering the sintered body separated from the substrate by magnetic force. 18 . The manufacturing method of the thermistor sintered body according to claim 6 further comprising recovering the sintered body separated from the substrate by magnetic force.

Assignees

Inventors

Classifications

  • Apparatus or processes specially adapted for manufacturing resistors (providing fillings for housings or enclosures H01C1/02; reducing insulation surrounding a resistor to powder H01C1/03; manufacture of thermally variable resistors H01C7/02, H01C7/04) · CPC title

  • by centrifugal or rotational casting (slip-casting involving rotation of the mould B28B1/28; for molten material B28B1/54) · CPC title

  • Oxides or oxidic compounds · CPC title

  • having negative temperature coefficient · CPC title

  • by thick film techniques, e.g. serigraphy · CPC title

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What does patent US12555707B2 cover?
A thermistor sintered body has a thickness in a range of 1 μm to 100 μm and an area in a range of 1 mm 2 to 10 mm 2 , and is composed of a single body of a sintered body having a composition of NiMn 2 O 4 . This thermistor sintered body can be manufactured by a first step of dropping a raw material liquid RL onto a surface of a substrate rotatably supported, a second step of rotating the subst…
Who is the assignee on this patent?
Shibaura Electronics Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01C7/041. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Feb 17 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).