Method for cleaning semiconductor substrate, method for producing processed semiconductor substrate, and stripping composition

Patent metadata

Field	Value
Publication number	US-12529018-B2
Application number	US-202117913639-A
Country	US
Kind code	B2
Filing date	Mar 22, 2021
Priority date	Mar 23, 2020
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

The invention provides a semiconductor substrate cleaning method including a step of removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) (in the formula, L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and k represents the number of Ls and is an integer of 0 to 5) in an amount of 80 mass % or more.

First claim

The invention claimed is:

1 . A semiconductor substrate cleaning method comprising removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein:
the adhesive layer is a film formed by use of an adhesive composition that contains an adhesive component (S), and the adhesive component (S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation; the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:

where:
L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and
k represents the number of Ls and is an integer of 0 to 5.

2 . The semiconductor substrate cleaning method according to claim 1 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.

3 . The semiconductor substrate cleaning method according to claim 2 , wherein the solvent is formed of the organic solvent represented by formula (L).

4 . The semiconductor substrate cleaning method according to claim 1 , wherein L is a methyl group or an isopropyl group.

5 . The semiconductor substrate cleaning method according to claim 1 , wherein the organic solvent represented by formula (L) is at least one species selected from among toluene, mesitylene, p-cymene, and 1,2,4-trimethylbenzene.

6 . The semiconductor substrate cleaning method according to claim 1 , wherein the adhesive component(S) further comprises at least one species selected from an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.

7 . A processed semiconductor substrate production method comprising:
producing a laminate having a semiconductor substrate, a support substrate, and an adhesive layer formed from an adhesive composition; processing the semiconductor substrate of the produced laminate; separating the semiconductor substrate and the adhesive layer from the support substrate; and removing the adhesive layer on the semiconductor substrate by use of a remover composition, wherein; the adhesive layer is a film formed by use of an adhesive composition that contains an adhesive component(S), and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation; the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:

where:
L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and
k represents the number of Ls and is an integer of 0 to 5.

8 . The processed semiconductor substrate production method according to claim 7 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.

9 . The processed semiconductor substrate production method according to claim 8 , wherein the solvent is formed of the organic solvent represented by formula (L).

10 . The processed semiconductor substrate production method according to claim 7 , wherein L is a methyl group or an isopropyl group.

11 . The processed semiconductor substrate production method according to claim 10 , wherein the organic solvent represented by formula (L) is at least one species selected from among toluene, mesitylene, p-cymene, and 1,2,4-trimethylbenzene.

12 . The processed semiconductor substrate production method according to claim 7 , wherein the adhesive component(S) further comprises at least one species selected from an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.

13 . A remover composition for use in removal of an adhesive layer provided on a semiconductor substrate during cleaning the semiconductor substrate, which composition contains a solvent but no salt, wherein:
the adhesive layer is a film formed by use of an adhesive composition that contains an adhesive component(S), and the adhesive component(S) comprises a siloxane adhesive containing a polyorganosiloxane component (A) that is curable through hydrosilylation; the solvent includes an organic solvent represented by formula (L) in an amount of 80 mass % or more:

where:
L represents a substituent to the benzene ring, and each of a plurality of Ls represents a C1 to C4 alkyl group; and
k represents the number of Ls and is an integer of 0 to 5.

14 . The remover composition according to claim 13 , wherein the solvent includes the organic solvent represented by formula (L) in an amount of 85 mass % or more.

15 . The remover composition according to claim 14 , wherein the solvent is formed of the organic solvent represented by formula (L).

16 . The remover composition according to claim 13 , wherein Lis a methyl group or an isopropyl group.

17 . The remover composition according to claim 16 , wherein the organic solvent represented by formula (L) is at least one species selected from among toluene, mesitylene, p-cymene, and 1,2,4-trimethylbenzene.

18 . The remover composition according to claim 13 , wherein the adhesive component(S) further comprise at least one species selected from an acrylic resin adhesive, an epoxy resin adhesive, a polyamide adhesive, a polystyrene adhesive, a polyimide adhesive, and a phenolic resin adhesive.

Assignees

• Nissan Chemical Corp

Inventors

• Okuno Takahisa
• Yanai Masaki
• Fukuda Takuya
• Ogata Hiroto
• Moriya Shunsuke
• Ogino Hiroshi
• Shinjo Tetsuya

Classifications

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• C11D2111/22

  Electronic devices, e.g. PCBs or semiconductors · CPC title

• C11D7/3281

  Heterocyclic compounds · CPC title

• H10W42/121

  protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title