Method of forming low-k material layer with high-frequency power, structure including the layer, and system for forming same

Patent metadata

Field	Value
Publication number	US-12512313-B2
Application number	US-202218088041-A
Country	US
Kind code	B2
Filing date	Dec 23, 2022
Priority date	Dec 28, 2021
Publication date	Dec 30, 2025
Grant date	Dec 30, 2025

Abstract

Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, and providing high frequency, high plasma power to polymerize the one or more precursors to form dense low-k material with desired properties.

First claim

What is claimed is:

1 . A method of forming an initially flowable low-k material layer on a surface of a substrate, the method comprising the steps of:
providing a substrate within a reaction chamber of a reactor system; providing one or more precursors to the reaction chamber; and providing first plasma power to polymerize the one or more precursors within the reaction chamber to form low-k material, wherein a frequency of the first plasma power is between about 27 MHz and about 100 MHz and wherein the first plasma power is greater than 2 kW, providing a second plasma power having a frequency of less than 500 kHz, and filling a recess on a surface of the substrate with the initially flowable low-k material, wherein the second plasma power is less than the first plasma power.

2 . The method of claim 1 , wherein the first plasma power is between about 2 kW and about 5 kW.

3 . The method of claim 1 , wherein a temperature within the reaction chamber during the step of providing one or more precursors to the reaction chamber is between about 200° C. and about 450° C. or between about 300° C. and about 400° C.

4 . The method of claim 1 , wherein a pressure within the reaction chamber during the step of providing one or more precursors to the reaction chamber is between about 1 torr and about 20 torr or between about 2 torr and about 10 torr.

5 . The method of claim 1 , wherein the step of providing the first plasma power and the step of providing the second plasma power are performed together and wherein the step of providing the first plasma power begins after the step of providing one or more precursors starts and ends before the step of providing one or more precursors ends.

6 . The method of claim 1 , wherein a frequency of the second plasma power is between about 400 kHz and about 500 kHz.

7 . The method of claim 1 , wherein the second plasma power is between about 10 W and about 300 W.

8 . The method of claim 1 , wherein the one or more precursors comprise a compound comprising one or more of Si—C—Si and Si—O—Si bonds.

9 . The method of claim 1 , wherein the one or more precursors comprise a compound comprising a cyclic structure.

10 . The method of claim 9 , wherein the cyclic structure comprises silicon.

11 . The method of claim 9 , wherein the cyclic structure comprises silicon and oxygen.

12 . The method of claim 1 , wherein the one or more precursors comprise a compound comprising an organosilicon compound.

13 . The method of claim 1 , wherein the one or more precursors comprise one or more of dimethyldimethoxysilane (DMDMOS), octamethylcyclotetrasiloxane (OMCTS), tetramethylcyclotetrasiloxane (TMCTS), octamethoxydodecasiloxane (OMODDS), octamethoxycyclioiloxane, diethoxymethylsilane (DEMS), dimethoxymethylsilane (DMOMS), phenoxydimethylsilane (PODMS), dimethyldioxosilylcyclohexane (DMDOSH), 1,3-dimethoxytetramethyldisiloxane (DMOTMDS), dimethoxydiphenylsilane (DMDPS), and dicyclopentyldimethoxysilane (DcPDMS).

14 . The method of claim 1 , wherein at least one of the one or more precursors comprises a ring structure comprising a chemical formula represented by —(Si(R 1 , R 2 )—O) n —, where n ranges from about 3 to about 10.

15 . The method of claim 1 , wherein at least one of the one or more precursors comprises a linear structure comprising a chemical formula represented by R 3 —(Si(R 1 , R 2 ) m —O (m-1) )—R 4 , where m can range from about 1 to about 7.

16 . The method of claim 1 , wherein the reactor system comprises a capacitively coupled plasma (CCP) reactor.

17 . A reactor system comprising:
a reaction chamber; a precursor source coupled to the reaction chamber; an inert gas source coupled to the reaction chamber; a vacuum source coupled to the reaction chamber; and a controller configured to operate at least one plasma power source to provide a plasma first power of between about 2 kW and about 5 kW with a power frequency between about 27 MHz and about 100 MHz and a second plasma power of between about 10 W and about 300 W with a power frequency between about 400 Hz and about 500 Hz to form an initially flowable low-k material layer on a surface of a substrate.

Assignees

• Asm Ip Holding Bv

Inventors

• Kaneko Chie
• Yanagisawa Ippei
• Huang Yu Min

Classifications

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6686 Primary

  the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title