Method for treating SiOCH film with hydrogen plasma
US-9029272-B1 · May 12, 2015 · US
US9190263B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9190263-B2 |
| Application number | US-201313973777-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 22, 2013 |
| Priority date | Aug 22, 2013 |
| Publication date | Nov 17, 2015 |
| Grant date | Nov 17, 2015 |
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A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.
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We claim: 1. A method for forming a modified low-k SiOCH film on a substrate, comprising: (i) providing a low-k SiOCH film formed on a substrate by flowable CVD; (ii) exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and (iii) curing the low-k SiOCH film obtained in step (ii). 2. The method according to claim 1 , further comprising, p…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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