Conductive Interconnect Structures in Integrated Circuits
US-2020105593-A1 · Apr 2, 2020 · US
US12486590B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12486590-B2 |
| Application number | US-202218690685-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 25, 2022 |
| Priority date | Sep 8, 2021 |
| Publication date | Dec 2, 2025 |
| Grant date | Dec 2, 2025 |
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Disclosed is a substrate processing method, which comprises the following steps: S 1 : transferring a substrate plated with a first metal layer from a first plating chamber to a second plating chamber; S 2 : after transferring the substrate to the second plating chamber, forming a water film layer on the front side of the substrate; S 3 : electroplating a second metal layer on the first metal layer. By means of a step of forming a water film layer before electroplating in a plating chamber, the present invention has advantages of preventing delamination between two metal layers and solving product recess abnormality.
Opening claim text (preview).
What is claimed is: 1 . A substrate processing method, comprising: S 1 : transferring a substrate plated with a first metal layer from a first plating chamber to a second plating chamber; S 2 : after transferring the substrate to the second plating chamber, forming a water film layer on the front side of the substrate; S 3 : electroplating a second metal layer on the first metal layer. 2 . The substrate processing method according to claim 1 , wherein the step S 2 comprises: S 21 : using a substrate chuck to clamp the substrate and bring the substrate to rotate, and using a spray device in the second plating chamber to spray water film forming liquid on the front side of the substrate to form the water film layer, and setting the rotation speed of the substrate chuck, the spray time and the spray flow rate of the spray device; S 22 : making the substrate rotate according to the set rotation speed, and at the same time, the spray device in the second plating chamber spraying the water film forming liquid on the front side of the substrate according to the set spray time and spray flow rate, so as to form the water film layer. 3 . The substrate processing method according to claim 2 , wherein the shape of the water film forming liquid ejected by the spray device is fan-shaped, and the water film forming liquid is deionized water. 4 . The substrate processing method according to claim 1 , wherein the step S 1 comprises: S 11 : placing the substrate in the first plating chamber to electroplate the first metal layer on the front side of the substrate, wherein the front side of the substrate faces down; S 12 : taking the substrate from the first plating chamber, and keeping the front side of the substrate facing down until the substrate is transferred to the second plating chamber. 5 . The substrate processing method according to claim 4 , wherein the step S 11 comprises: S 101 : after the substrate is transferred to the first plating chamber, selecting whether it is necessary to spray the water film forming liquid from a spray device in the first plating chamber to the front side of the substrate, if necessary, spraying the water film forming liquid to the front side of the substrate via the spray device in the first plating chamber, and then entering step S 102 , if not necessary, directly entering the step S 102 ; S 102 : electroplating the first metal layer on the front side of the substrate. 6 . The substrate processing method according to claim 1 , wherein before the step S 1 , the method further comprises: S 01 : taking the substrate from a temporary storage area with the front side of the substrate facing up; S 02 : transferring the substrate to the first plating chamber, and changing the front side of the substrate from facing up to facing down during the transfer process. 7 . The substrate processing method according to claim 1 , further comprising the following steps: S 4 : taking the substrate from the second plating chamber, and keeping the front side of the substrate facing down until the substrate is transferred to a third plating chamber; S 5 : electroplating a third metal layer on the second metal layer after the substrate is transferred to the third plating chamber. 8 . The substrate processing method according to claim 7 , wherein the step S 5 comprises: S 501 : after transferring the substrate to the third plating chamber, selecting whether it is necessary to spray the water film forming liquid on the front side of the substrate from a spray device in the third plating chamber, if necessary, spraying the water film forming liquid to the front side of the substrate via the spray device in the third plating chamber, and then entering step S 502 , if not necessary, directly entering the step S 502 ; S 502 : electroplating a third metal layer on the second metal layer. 9 . The substrate processing method according to claim 7 , further comprising the following steps: S 6 : taking the substrate from the third plating chamber with the front side of the substrate facing down; S 7 : transferring the substrate to a cleaning chamber, and changing the front side of the substrate from facing down to facing up during the transfer process; S 8 : cleaning and drying the substrate in the cleaning chamber.
using a liquid · CPC title
Connecting or disconnecting · CPC title
Suspending or supporting devices for articles to be coated · CPC title
Electroplating of non-metallic surfaces (C25D7/12 takes precedence) · CPC title
Electroplating with more than one layer of the same or of different metals (for bearings C25D7/10) · CPC title
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