Organometallic compound and method of manufacturing integrated circuit using the same

Patent metadata

Field	Value
Publication number	US-12473309-B2
Application number	US-202117346400-A
Country	US
Kind code	B2
Filing date	Jun 14, 2021
Priority date	Jun 16, 2020
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

First claim

What is claimed is:

1 . An organometallic compound represented by Formula (I),

wherein, in Formula (I), M is a tantalum atom; or a vanadium atom, R 1 is a C1-C5 straight-chain alkyl group or a C3-C5 branched alkyl group, R 2 and R 3 are each independently a C1-C8 straight-chain alkyl group or a C3-C8 branched alkyl group, at least one of R 2 and R 3 being substituted with at least six fluorine atom, R 4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and n is an integer of 0 to 5, and
wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.

2 . The organometallic compound as claimed in claim 1 , wherein, in Formula (I),
n is 0 or 1, and when n is 1, R 1 is a methyl group or an ethyl group.

3 . The organometallic compound as claimed in claim 1 ,
wherein, in Formula (I), R 2 and R 3 are each independently a C1-C8 straight-chain perfluoroalkyl group or a C3-C5 branched perfluoroalkyl group.

4 . The organometallic compound as claimed in claim 1 ,
wherein, in Formula (I), at least one of R 2 and R 3 is a C3-C5 branched perfluoroalkyl group.

5 . An organometallic compound represented by Formula (I),

wherein, in Formula (I), M is a niobium atom,
n is 0,
R 2 and R 3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group, and
R 4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and
wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.

6 . The organometallic compound as claimed in claim 1 ,
wherein, in Formula (I), R 4 is a C3-C8 branched alkyl group.

7 . The organometallic compound as claimed in claim 1 ,
wherein, in Formula (I), R 4 is an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a tert-octyl group.

8 . The organometallic compound as claimed in claim 1 ,
wherein, in Formula (I), M is a tantalum atom.

9 . The organometallic compound as claimed in claim 1 ,
wherein, in Formula (I), M is a tantalum atom, R 1 is a methyl group or an ethyl group, R 2 and R 3 are each independently a C1-C8 straight-chain perfluoroalkyl group or a C3-C5 branched perfluoroalkyl group, R 4 is a C3-C8 branched alkyl group, and n is 0 or 1.

10 . A method of manufacturing an integrated circuit (IC) device, the method comprising forming a metal-containing film on a substrate by using an organometallic compound represented by Formula (I):

wherein, in Formula (I), M is a niobium atom, n is 0, R 2 and R 3 are each independently a hexafluoroisopropyl group or a nonafluoro tert-butyl group, and R 4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and
wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.

11 . The method as claimed in claim 10 ,
wherein forming the metal-containing film includes: supplying the organometallic compound of Formula (I) onto the substrate; and supplying a reactive gas onto the substrate.

12 . The method as claimed in claim 11 ,
wherein the reactive gas includes a nitriding gas, the nitriding gas including NH 3 , N 2 plasma, an organic amine compound, a hydrazine compound, or a combination thereof.

13 . The method as claimed in claim 11 ,
wherein the reactive gas includes an oxidizing gas, the oxidizing gas including O 2 , O 3 , O 2 plasma, H 2 O, NO 2 , NO, nitrous oxide (N 2 O), CO, CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, an alcohol, a peroxide, sulfur oxide, or a combination thereof.

14 . The organometallic compound as claimed in claim 5 ,
wherein, in Formula (I), R 4 is a C3-C8 branched alkyl group.

15 . The organometallic compound as claimed in claim 5 ,
wherein, in Formula (I), R 4 is an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a tert-octyl group.

16 . The method as claimed in claim 10 ,
wherein, in Formula (I), R 4 is a C3-C8 branched alkyl group.

17 . The method as claimed in claim 10 ,
wherein, in Formula (I), R 4 is an isopropyl group, a sec-butyl group, a tert-butyl group, a tert-pentyl group, or a tert-octyl group.

Assignees

• Samsung Electronics Co Ltd
• Adeka Corp

Inventors

• Ryu Seungmin
• Kim Younsoo
• Park Gyuhee
• Cho Younjoung
• Aoki Yutaro
• Fuse WAKANA
• Harano Kazuki
• Koide Takanori
• Manabe Yoshiki
• Saito Kazuya
• Uchiuzou Hiroyuki

Classifications

• H10K85/30

  Coordination compounds · CPC title

• H10K71/166

  using selective deposition, e.g. using a mask · CPC title

• C23C16/45557

  Pulsed pressure or control pressure · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• C23C16/34

  Nitrides {(C23C16/303 takes precedence)} · CPC title