Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Patent metadata

Field	Value
Publication number	US-10134582-B2
Application number	US-201615298275-A
Country	US
Kind code	B2
Filing date	Oct 20, 2016
Priority date	Dec 21, 2015
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

A tantalum compound, a method of forming a thin film, and a method of fabricating an integrated circuit device, the tantalum compound being represented by the following General Formula (I):

First claim

What is claimed is:

1. A method of fabricating an integrated circuit device, the method comprising:
forming a lower structure on a substrate; and
forming a tantalum-containing film on the lower structure by using a tantalum compound represented by the following General Formula (I):

wherein, in General Formula I,
R 1 , R 3 , and R 4 are each independently a C1 to C10 substituted or unsubstituted linear or branched alkyl, alkenyl, or alkynyl group, or a C4 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group; and
R 2 is a hydrogen atom, a C1 to C10 substituted or unsubstituted linear or branched alkyl, alkenyl, or alkynyl group, or a C6 to C20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group.

2. The method as claimed in claim 1 , wherein the tantalum compound is a liquid at 25° C. and 1 atm.

3. The method as claimed in claim 1 , further comprising forming a capacitor on the substrate such that the capacitor includes a lower electrode, a dielectric film, and an upper electrode,
wherein:
forming the lower structure includes forming the lower electrode of the capacitor on the substrate, and
forming the tantalum-containing film includes forming a tantalum oxide film that covers a surface of the lower electrode.

4. The method as claimed in claim 3 , wherein:
forming the lower electrode includes forming a mold pattern on the substrate such that the mold pattern includes a hole exposing a conductive region of the substrate; and forming the lower electrode such that the lower electrode has a sidewall extending along an inner wall of the hole, and
forming the tantalum oxide film includes exposing the sidewall of the lower electrode by removing the mold pattern; and forming a Ta 2 O 5 film that covers the exposed sidewall of the lower electrode.

5. The method as claimed in claim 3 , wherein forming the capacitor includes forming a high-K dielectric film that includes a combination of the tantalum-containing film and at least one metal oxide film including a metal that is different from tantalum.

6. The method as claimed in claim 1 , wherein:
forming the lower structure includes forming a plurality of fin-shaped active regions that protrude upwardly from the substrate by etching a portion of the substrate; and forming a high-K dielectric film on the plurality of fin-shaped active regions, and
forming the tantalum-containing film includes forming a tantalum nitride film on the high-K dielectric film on the plurality of fin-shaped active regions.

7. The method as claimed in claim 6 , wherein forming the tantalum nitride film includes:
forming a tantalum compound-adsorbed layer on the high-K dielectric film by supplying the tantalum compound represented by General Formula (I) onto the high-K dielectric film; and
reacting the tantalum compound-adsorbed layer with a nitrogen atom-containing reactive gas by supplying the reactive gas onto the tantalum compound-adsorbed layer.

8. The method as claimed in claim 6 , wherein forming the tantalum nitride film includes supplying the tantalum compound represented by General Formula (I) and a nitrogen atom-containing reactive gas onto the high-K dielectric film.

9. The method as claimed in claim 6 , further comprising forming a metal-containing gate layer on the tantalum nitride film on the plurality of fin-shaped active regions, after forming the tantalum nitride film, wherein forming the metal-containing gate layer includes:
forming a first metal-containing film on the tantalum nitride film on the plurality of fin-shaped active regions, the first metal-containing film including a metal that is different from tantalum;
exposing a portion of the tantalum-containing film by etching a portion of the first metal-containing film on a portion of the plurality of fin-shaped active regions and using the tantalum nitride film as an etch stop layer;
cleaning an exposed surface of the tantalum nitride film and an upper surface of the first metal-containing film; and
forming a second metal-containing film that covers the exposed surface of the tantalum nitride film and the upper surface of the first metal-containing film.

10. The method as claimed in claim 9 , wherein exposing the portion of the tantalum-containing film by etching the portion of the first metal-containing film includes exposing the portion of the tantalum-containing film by etching the portion of the first metal-containing film with an etch solution that includes H 2 O 2 .

Assignees

• Samsung Electronics Co Ltd
• Adeka Corp

Inventors

• Ryu Seung-Min
• Koide Takanori
• Yamada Naoki
• Lim Jae-Soon
• Shiratori Tsubasa
• Cho Youn-Joung

Classifications

• C07F9/00 Primary

  Compounds containing elements of Groups 5 or 15 of the Periodic Table · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/4412

  Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps · CPC title

• C23C16/4401

  Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title