Group 5 transition metal-containing compounds for vapor deposition of group 5 transition metal-containing films

Patent metadata

Field	Value
Publication number	US-10106887-B2
Application number	US-201315035592-A
Country	US
Kind code	B2
Filing date	Nov 13, 2013
Priority date	Nov 13, 2013
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

Disclosed are Group 5 transition metal-containing thin film forming precursors. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit Group 5 transition metal-containing thin films on one or more substrates via vapor deposition processes.

First claim

The invention claimed is:

1. A Group 5 transition metal-containing thin film forming precursor having one of the following formulae:

wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V) or tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).

2. The Group 5 transition metal-containing thin film forming precursor of claim 1 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V).

3. The Group 5 transition metal-containing thin film forming precursor of claim 1 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).

4. A process for the deposition of a Group 5 transition metal-containing film on a substrate, comprising the steps of: introducing the vapor of the Group 5 transition metal-containing thin film forming precursor into a reactor having a substrate disposed therein and depositing at least part of the Group 5 transition metal-containing compound onto the substrate, the Group 5 transition metal-containing thin film forming precursor having one of the following formulae:

wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V) or tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).

5. The process of claim 4 , further comprising introducing at least one reactant into the reactor.

6. The process of claim 5 , wherein the reactant is selected from the group consisting of H 2 , H 2 CO N 2 H 4 , NH 3 , SiH 4 , Si 2 H 6 , Si 3 H 8 , SiH 2 Me 2 , SiH 2 Et 2 , N(SiH 3 ) 3 , hydrogen radicals thereof, and mixtures thereof.

7. The process of claim 5 , wherein the reactant is selected from the group consisting of: O 2 , O 3 , H 2 O, H 2 O 2 NO, N 2 O, NO 2 , oxygen radicals thereof, and mixtures thereof.

8. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor and the reactant are introduced into the reactor simultaneously and the reactor is configured for chemical vapor deposition.

9. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor and the reactant are introduced into the reactor sequentially and the reactor is configured for atomic layer deposition.

10. The process of claim 5 , wherein the substrate is zirconium oxide (ZrO 2 ).

11. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidobis(diethylamido)mono(tert-butylalkoxo)Niobium(V).

12. The process of claim 5 , wherein the Group 5 transition metal-containing thin film forming precursor is tert-butylimidomono(diethylamido)bis(tert-butylalkoxo)Niobium(V).

Assignees

• Air Liquide
• Lansalot Matras Clement
• Noh Wontae
• Lee Jooho
• Air Liquide

Inventors

• Lansalot-Matras Clément
• Noh Wontae
• Lee Jooho

Classifications

• H10P14/6939

  characterised by the metal · CPC title

• H10P14/6681

  the precursor containing a compound comprising Si · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/418

  the conductive layers comprising transition metals · CPC title