Film-forming composition and method for fabricating film by using the same

Patent metadata

Field	Value
Publication number	US-9828402-B2
Application number	US-201514855697-A
Country	US
Kind code	B2
Filing date	Sep 16, 2015
Priority date	Mar 20, 2015
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.

First claim

What is claimed is:

1. A film-forming composition comprising:
a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine,
wherein the 3-intracyclic cyclopentadienyl precursor is represented by the following formula 1,

wherein M is selected from the group consisting of Zr, Hf, and Ti.

2. The film-forming composition of claim 1 , wherein the dimethyethylamine is included in the composition in an amount of 1 to 99 wt % based on the total amount of the composition.

3. The film-forming composition of claim 1 , wherein the precursor and the dimethyethylamine have a weight ratio of 1:99 to 99:1.

4. A method for fabricating a film comprising:
depositing a film-forming composition over a substrate to form a film,
wherein the film-forming composition comprises a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine,
wherein the 3-intracyclic cyclopentadienyl precursor is represented by the following formula 1,

wherein M is selected from the group consisting of Zr, Hf, and Ti.

5. The method of claim 4 , wherein the film is deposited by Atomic Layer Deposition.

6. The method of claim 5 , wherein the depositing of the film includes:
preparing a liquid-phase composition by dissolving the precursor in the dimethyethylamine,
placing a substrate in a chamber, and
introducing the liquid-phase composition into the chamber through Liquid Delivery System.

7. The method of claim 6 , wherein the depositing of the film further includes vaporizing the liquid-phase composition, and
wherein the introducing of the liquid-phase composition includes introducing the vaporized liquid-phase composition into the chamber.

8. The method of claim 4 , wherein the dimethyethylamine is included in an amount of 1 to 99 wt % based on the total amount of the film-forming composition.

9. The method of claim 4 , wherein the precursor and the dimethyethylamine has a weight ratio of 1:99 to 99:1.

10. A method for fabricating a film comprising:
preparing a liquid-phase metal precursor by dissolving a 3-intracyclic cyclopentadienyl metal precursor in dimethyethylamine, wherein the 3-intracyclic cyclopentadienyl metal precursor is represented by the following formula 1,

wherein M is selected from the group consisting of Zr, Hf, and Ti;
vaporizing the liquid-phase metal precursor and introducing the vaporized metal precursor into a chamber with a substrate;
adsorbing the vaporized metal precursor over the substrate; and
feeding a reactant reactable with the adsorbed metal precursor to form a metal-containing film over the substrate.

11. The method of claim 10 , wherein the metal-containing film comprises a metal selected from the group consisting of Zr, Ti, Hf, an oxide of the metal, and a nitride of the metal.

12. The method of claim 10 ,
wherein the forming of the metal-containing film is performed by atomic layer deposition or chemical vapor deposition.

Assignees

• Sk Hynix Inc
• Soulbrain Sigma-Aldrich Ltd

Inventors

• Moon Ji-Won
• Son Young-Jin
• Lee Jeong-Yeop
• JANG Jun-Soo
• Jung Jae-Sun
• Lee Sang-Kyung
• Hong Chang-Sung
• Kim Hyun-Joon
• Shin Jin-Ho
• Kim Dae-Hyun

Classifications

• C07F7/00

  Compounds containing elements of Groups 4 or 14 of the Periodic Table · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C07F17/00 Primary

  Metallocenes · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title