Sensor assemblies with multirange construction
US-10871407-B2 · Dec 22, 2020 · US
US12467802B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12467802-B2 |
| Application number | US-202217968153-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 18, 2022 |
| Priority date | Oct 18, 2022 |
| Publication date | Nov 11, 2025 |
| Grant date | Nov 11, 2025 |
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A body of a sensor includes a wafer having a cavity and a membrane deflectable into the cavity under an applied force. The membrane has a first section and a second section. The first section of the membrane is more deflectable than the second section in a first range of the applied force and the second section is more deflectable than the first section in a second range of the applied force that is different than the first range.
Opening claim text (preview).
What is claimed is: 1 . A body of a sensor, comprising: a wafer having a cavity; and a membrane deflectable into the cavity under an applied force, the membrane is formed in a single piece of a silicon material and has a lower surface facing the cavity, the membrane has a first section and a second section positioned through the membrane, the first section of the membrane is more deflectable than the second section in a first range of the applied force and the second section is more deflectable than the first section in a second range of the applied force that is different than the first range, the lower surface of the membrane directly abuts a surface within the cavity integrated with a wall of the wafer in the second range of the applied force. 2 . The body of claim 1 , wherein the second section is surrounded by the first section and is connected to the first section. 3 . The body of claim 2 , wherein the second range is greater than the first range. 4 . The body of claim 1 , wherein the membrane has a plurality of recesses extending into an upper surface of the membrane in the first section. 5 . The body of claim 4 , wherein each of the recesses has an inner edge shape adjacent to the second section, the inner edge shape is curved or rectilinear. 6 . The body of claim 4 , wherein each of the recesses extends into the membrane from the upper surface. 7 . The body of claim 1 , wherein the wafer has a plurality of portions defining the cavity, the plurality of portions include a first portion having a first depth from the membrane in an undeformed state of the membrane and a second portion having a second depth from the membrane in the undeformed state, the second depth is greater than the first depth. 8 . The body of claim 7 , wherein the wafer has a step between the first portion and the second portion. 9 . The body of claim 8 , wherein the step has a perimeter shape that is circular or polygonal. 10 . The body of claim 7 , wherein the second portion is positioned within and surrounded by the first portion. 11 . The body of claim 7 , wherein the first section of the membrane abuts the first portion of the wafer when the applied force is equal to or greater than a critical force. 12 . The body of claim 11 , wherein the critical force is between the first range and the second range. 13 . The body of claim 12 , wherein the second portion of the membrane is deflectable toward the second portion of the wafer in the second range of the applied force. 14 . The body of claim 1 , wherein the first section and the second section are two of at least three sections of the membrane, each of the at least three sections of the membrane is more deflectable than the other of the sections in a corresponding one of a plurality of ranges of the applied force. 15 . A sensor, comprising: a body including a wafer and a membrane deflectable into a cavity of the wafer under an applied force, the membrane is formed in a single piece of a silicon material and has a lower surface facing the cavity; a plurality of first piezoresistive elements disposed on a first section of the membrane; and a plurality of second piezoresistive elements disposed on a second section of the membrane, the first section and the second section positioned through the membrane, the first section of the membrane is more deflectable than the second section in a first range of the applied force and the second section is more deflectable than the first section in a second range of the applied force that is different than the first range, the lower surface of the membrane directly abuts a surface within the cavity integrated with a wall of the wafer in the second range of the applied force. 16 . The sensor of claim 15 , wherein the first piezoresistive elements are more sensitive to the applied force than the second piezoresistive elements in the first range and the second piezoresistive elements are more sensitive to the applied force than the first piezoresistive elements in the second range, the second range is greater than the first range. 17 . The sensor of claim 15 , wherein the first piezoresistive elements form a first Wheatstone bridge and the second piezoresistive elements form a second Wheatstone bridge. 18 . The sensor of claim 15 , further comprising a plurality of contact pads disposed on the membrane outside of the first section and the second section and a plurality of connective paths connecting the contact pads to the first piezoresistive elements and the second piezoresistive elements, the plurality of connective paths extend through the first section and the second section. 19 . The sensor of claim 18 , wherein the contact pads are a metal material disposed on an upper surface of the membrane. 20 . The sensor of claim 18 , wherein the body is a silicon material, the first piezoresistive elements, the second piezoresistive elements, and the connective paths are each a doped portion of the silicon material.
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