Pressure sensor device with anchors for die shrinkage and high sensitivity

US9964458B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9964458-B2
Application numberUS-201615153483-A
CountryUS
Kind codeB2
Filing dateMay 12, 2016
Priority dateMay 12, 2016
Publication dateMay 8, 2018
Grant dateMay 8, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The voltage output span and sensitivity from a MEMS pressure sensor are increased and pressure nonlinearity is reduced by thinning a diaphragm and forming the diaphragm to include anchors that are not connected to or joined to diaphragm-stiffening beams or thickened regions of the diaphragm.

First claim

Opening claim text (preview).

What is claimed is: 1. A pressure sensing element comprising: a first substrate having top and bottom sides; a diaphragm formed as part of the top side and as part of the bottom side, the diaphragm having top and bottom sides, the bottom side of the diaphragm having a substantially square bottom area and a substantially square bottom outer perimeter, the top side of the first substrate having a top area and a top outer perimeter inner portions of which form the top side of the diaphragm and which extend out along the top side of the first substrate further than the bottom area and the bottom outer perimeter; a recess formed into the top surface of the diaphragm, the recess being sized and shaped to define four anchors, the anchors being spaced apart from each other in the recess such that each anchor is formed near each diaphragm edge center; and a piezoresistor formed into a top surface of each anchor. 2. The pressure sensing element of claim 1 wherein the recess is a closed irregular polygon. 3. The pressure sensing element of claim 1 herein the anchors are symmetric. 4. The pressure sensing element of claim 1 herein the anchors are asymmetric. 5. The pressure sensing element of claim 1 herein the piezoresistors are connected to each other to form a Wheatstone bridge. 6. The pressure sensing element of claim 1 , wherein the diaphragm has a thickness between about 2.0 and about 5.0 microns and wherein the anchors have a different thickness between about 7.0 and about 15.0 microns. 7. The pressure sensing element of claim 1 , further comprising a second substrate attached to the bottom of the first substrate. 8. The pressure sensing element of claim 7 wherein the second substrate having a hole, which is aligned with the diaphragm and configured to conduct a fluid toward the bottom side of the diaphragm. 9. The pressure sensing element of claim 7 , further comprising a cap that covers the top side of the diaphragm and which defines a cavity above the top side of the diaphragm. 10. A pressure sensing element comprising: a first substrate having top and bottom sides; a cavity formed into the bottom of the first substrate, the cavity being sized and shaped to form a thin diaphragm in the first substrate, the diaphragm having a top surface and an opposing bottom surface in the cavity; a recess formed into the bottom surface of the diaphragm, the recess being sized and shaped to define a rim around the recess and four anchors, which extend from the rim, inwardly and toward each other, the anchors being spaced apart from each other in the recess such that each anchor is formed near each diaphragm edge center; wherein the rim forms as part of the bottom surface of the diaphragm and stiffens perimeter regions of the bottom surface of the diaphragm so as to prevent cavity corner over-etching and to improve pressure accuracy; and a piezoresistor formed into a top surface of each anchor. 11. The pressure sensing element of claim 10 , wherein the recess is a closed polygon. 12. The pressure sensing element of claim 10 , wherein the anchors are symmetric. 13. The pressure sensing element of claim 10 , wherein the anchors are symmetric. 14. The pressure sensing element of claim 10 , wherein the piezoresistors are connected to each other to form a Wheatstone bridge. 15. The pressure sensing element of claim 10 , wherein the diaphragm has a thickness between about 2.0 and about 5.0 microns and wherein the anchors have a different thickness between about 7.0 and about 15.0 microns. 16. The pressure sensing element of claim 10 , further comprising a second substrate attached to the bottom of the first substrate. 17. The pressure sensing element of claim 16 , wherein the second substrate having a hole, which is aligned with the diaphragm and configured to conduct a fluid toward the bottom side of the diaphragm. 18. The pressure sensing element of claim 17 , further comprising a cap that covers the top side of the diaphragm and which defines a cavity above the top side of the diaphragm.

Assignees

Inventors

Classifications

  • G01L9/0055Primary

    bonded on a diaphragm · CPC title

  • G01L9/0047Primary

    Diaphragm with non uniform thickness, e.g. with grooves, bosses or continuously varying thickness · CPC title

  • G01L9/0054Primary

    integral with a semiconducting diaphragm · CPC title

  • G01L1/20Primary

    by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids (of piezo-resistive materials G01L1/18); by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress · CPC title

  • Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US9964458B2 cover?
The voltage output span and sensitivity from a MEMS pressure sensor are increased and pressure nonlinearity is reduced by thinning a diaphragm and forming the diaphragm to include anchors that are not connected to or joined to diaphragm-stiffening beams or thickened regions of the diaphragm.
Who is the assignee on this patent?
Continental automotive systems inc
What technology area does this patent fall under?
Primary CPC classification G01L9/0055. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 08 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).