Copper alloy bonding wire for semiconductor devices
US-2023018430-A1 · Jan 19, 2023 · US
Copper bonding wire for semiconductor devices and semiconductor device
US12463171B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12463171-B2 |
| Application number | US-202017781316-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 20, 2020 |
| Priority date | Dec 2, 2019 |
| Publication date | Nov 4, 2025 |
| Grant date | Nov 4, 2025 |
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- Title
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Abstract
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There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm 2 ) or more and 1.6 (μm/μm 2 ) or less.
First claim
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The invention claimed is: 1 . A copper bonding wire for semiconductor devices, wherein a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm 2 ) or more and 1.6 (μm/μm 2 ) or less, wherein the density of crystal grain boundary refers to a total length (μm) of a crystal grain boundary that is present per unit area (μm 2 ), wherein the density of crystal grain boundary on the surface of the wire is calculated by dividing the total length (μm) of the crystal grain boundary by a measurement area (μm 2 ), where the crystal grain boundary is defined as a boundary at which an orientation difference between adjacent measurement points is 15° or more when measuring by using an EBSD method at measurement point intervals of 0.06 μm or more and 0.6 μm or less, and wherein the density of crystal grain boundary on the surface of the wire is measured under the condition that a center of width of a measuring surface is aligned with a center of width of the wire in a direction perpendicular to a longitudinal axis of the wire, the width of the measuring surface is 20% or more and 40% or less of a diameter of the wire, and a length of the measuring surface is five times the width of the measuring surface. 2 . The copper bonding wire according to claim 1 , comprising copper having a purity of 99.9% by mass or more. 3 . The copper bonding wire according to claim 1 , wherein the diameter of the wire is 15 μm or more and 300 μm or less. 4 . The copper bonding wire according to claim 1 , wherein a breaking strength of the wire is 145 MPa or more and 250 MPa or less. 5 . A semiconductor device comprising the copper bonding wire according to claim 1 .
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Frequently asked questions
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- What does patent US12463171B2 cover?
- There is provided a copper bonding wire having an improved storage life in the atmosphere. There is specifically provided a copper bonding wire for semiconductor devices characterized in that a density of crystal grain boundary on a surface of the wire is 0.6 (μm/μm 2 ) or more and 1.6 (μm/μm 2 ) or less.
- Who is the assignee on this patent?
- Nippon Micrometal Corp, Nippon Steel Chemical & Mat Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10W72/50. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 04 2025 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).