Heating member, electrostatic chuck, and ceramic heater
US-10347521-B2 · Jul 9, 2019 · US
US12451335B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12451335-B2 |
| Application number | US-202318534182-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 8, 2023 |
| Priority date | Feb 23, 2018 |
| Publication date | Oct 21, 2025 |
| Grant date | Oct 21, 2025 |
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An electrostatic chuck for a substrate processing system is provided. The electrostatic chuck includes: a top plate configured to electrostatically clamp to a substrate and formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate disposed below the intermediate layer and formed of ceramic. The intermediate layer bonds the top plate to the baseplate.
Opening claim text (preview).
What is claimed is: 1. An electrostatic chuck for a substrate processing system, the electrostatic chuck comprising: a top plate comprising one or more electrostatic clamping electrodes configured to electrostatically clamp a substrate to the top plate, the top plate being formed of ceramic; an intermediate layer disposed below the top plate; and a baseplate distinct from the top plate, disposed below the intermediate layer, and formed of ceramic, wherein the intermediate layer bonds the top plate to the baseplate, and the baseplate comprises a first portion comprising one or more liquid coolant channels, a second portion protruding upward from the first portion and having a smaller diameter than an outer diameter of the baseplate, a first set of one or more gas channels at least partially disposed in the second portion, and one or more radio frequency (RF) electrodes disposed in the second portion above the one or more gas channels and configured for RF plasma generation. 2. The electrostatic chuck of claim 1 , wherein the baseplate comprises a plurality of RF electrodes including the one or more RF electrodes. 3. The electrostatic chuck of claim 2 , wherein the plurality of RF electrodes are configured for RF plasma generation. 4. The electrostatic chuck of claim 2 , wherein the plurality of RF electrodes are not connected to each other and are independently controlled. 5. The electrostatic chuck of claim 2 , wherein the plurality of RF electrodes are embedded in the second portion of the baseplate above the one or more gas channels. 6. The electrostatic chuck of claim 1 , wherein the second portion has a smaller diameter than an outer diameter of the top plate. 7. The electrostatic chuck of claim 1 , wherein the top plate has a smaller outer diameter than the outer diameter of the baseplate. 8. The electrostatic chuck of claim 1 , wherein the baseplate further comprises a second set of one or more gas channels disposed in the first portion below the one or more liquid coolant channels. 9. The electrostatic chuck of claim 1 , further comprising a RF electrode disposed in the first portion radially outward of the second portion. 10. The electrostatic chuck of claim 1 , further comprising an edge ring disposed on the baseplate and at least partially disposed radially outward of the top plate, wherein the second portion centers the edge ring on the baseplate. 11. The electrostatic chuck of claim 10 , further comprising a RF electrode disposed in the first portion below the edge ring. 12. The electrostatic chuck of claim 1 , further comprising an edge ring disposed on the baseplate and at least partially disposed radially outward of the top plate, wherein the edge ring comprises a RF electrode or an electrostatic clamping electrode. 13. The electrostatic chuck of claim 1 , wherein the top plate further comprises one or more heating elements. 14. The electrostatic chuck of claim 1 , wherein the baseplate further comprises one or more direct current electrodes. 15. The electrostatic chuck of claim 1 , wherein at least one of the one or more liquid coolant channels is in a bifillar arrangement. 16. The electrostatic chuck of claim 1 , wherein at least one of the one or more liquid coolant channels is in a single fillar arrangement. 17. The electrostatic chuck of claim 1 , wherein the one or more liquid coolant channels comprise: a first set of liquid coolant channels; and a second set of liquid coolant channels disposed below the first set of liquid coolant channels. 18. The electrostatic chuck of claim 1 , further comprising a gas channel extending from a bottom portion of the baseplate to an outlet in the top plate, wherein the gas channel extending from the bottom portion of the baseplate comprises at least one porous medium. 19. The electrostatic chuck of claim 1 , further comprising: an edge ring disposed on the baseplate and at least partially disposed radially outward of the top plate; and a single annular-shaped seal disposed between and in contact with the edge ring and the baseplate, and radially outward of and providing protection for a radial outer edge of the intermediate layer. 20. The electrostatic chuck of claim 19 , wherein the single annular-shaped seal covers the radial outer edge of the intermediate layer. 21. The electrostatic chuck of claim 20 , wherein: the baseplate comprises a plurality of RF electrodes including the one or more RF electrodes; and the plurality of RF electrodes are disposed radially outward of the top plate. 22. The electrostatic chuck of claim 20 , wherein at least two of the one or more RF electrodes are embedded in the baseplate radially outward of the second portion. 23. The electrostatic chuck of claim 20 , wherein the one or more RF electrodes are disposed in the baseplate radially outward of the second portion and are not disposed below the top plate. 24. The electrostatic chuck of claim 1 , wherein the baseplate has a unitary structure. 25. The electrostatic chuck of claim 1 , wherein the first portion and the second portion are integrally formed as a single part, namely the baseplate. 26. The electrostatic chuck of claim 1 , wherein the second portion is vertically higher than the first portion in a processing chamber of the substrate processing system. 27. The electrostatic chuck of claim 1 , wherein the first portion of the baseplate comprises a RF electrode that includes: a first portion disposed under one of the one or more RF electrodes, which are disposed in the second portion of the baseplate, and a second portion disposed more radially outward of the second portion of the baseplate. 28. A substrate processing system comprising: a processing chamber; an electrostatic chuck disposed in the processing chamber, wherein the electrostatic chuck includes a top plate comprising one or more electrostatic clamping electrodes configured to electrostatically clamp a substrate to the top plate, the top plate being formed of ceramic, an intermediate layer disposed below the top plate, a baseplate comprising one or more radio frequency (RF) electrodes and being distinct from the top plate, disposed below the intermediate layer, and formed of ceramic, wherein the baseplate comprises a first portion comprising at least one of the one or more RF electrodes, and a second portion that protrudes upward from the first portion and has a smaller diameter than an outer diameter of the baseplate, wherein the top plate has a smaller outer diameter than the outer diameter of the baseplate, and wherein the at least one of the one or more RF electrodes are disposed more radially outward than at least one of i) the second portion, and ii) the top plate; and an edge ring disposed on the baseplate above the at least one of the one or more RF electrodes and radially outward of a top surface of the top plate. 29. The substrate processing system of claim 28 , wherein the at least one of the one or more RF electrodes is configured for RF plasma generation. 30. The substrate processing system of claim 28 , wherein the second portion has a smaller diameter than an outer diameter of the top plate. 31. The substrate processing system of claim 28 , further comprising: a temperature sensor disposed in at least one of the top plate an
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